Hopping photoconductivity and the effectiveness of phonon detection in GaAs:Zn bolometers

Taele, B. M.; Narayan, Himanshu; Mukaro, R.

doi:10.1016/j.sse.2007.11.013

Cited by 2 publications

(3 citation statements)

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“…The calculation of ε 3 ≈ 0.74e 2 N 1/3 /(4πε) according to the NNH model [17], for K ≈ 0.5 and ε/ε 0 = 12.4, is shown in figure 3 by the dashed line. It can be seen that the calculation according to (16) agrees with the experimental data [6][7][8][9][10][11][12], while the calculation using the model in [17] gives overestimated values of the activation energy ε 3 . In the donor concentration interval, where in figure 3 the curve 1 is split up with the curve 1 (from N ≈ 5 × 10 14 cm −3 to N M ≈ 2 × 10 16 cm −3 ), the ratio of quantum-mechanical broadening δE τ (u m ) of donor levels to the donor classical band width W changes from 10 −3 to 0.3.…”

Section: Comparison Of Calculations With Experimental Data For N-gaassupporting

confidence: 56%

“…Due to the deep energy level of antisite As donors (about 0.75 eV below the conduction band edge) the hopping conduction is possible even at room temperature. In [16], the hopping photoconduction and non-equilibrium phonon detection in ptype GaAs bolometers were studied at the temperature below 2 K. However, there are still some troubling unanswered questions. To the best of our knowledge, a quantitative description of hopping transport of the electrons is still lacking, even via hydrogen-like donors in gallium arsenide crystals.…”

Section: Introductionmentioning

confidence: 99%

“…The dependences of the activation energy ε 3 of hopping conductivity on the donor concentration N in n-GaAs. The solid lines represent our calculation using(16) for the compensation ratio K = 0.5 at the temperature T = 2.5 K: 1-without donor level broadening ( τ = 0), 1 -taking into account donor level broadening ( τ = 0). Experimental data on activation energy: (a) see[6,7], (b) see[8], (c) see[9], (d) see[10], (e) see[11], (f ) see[12].…”

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confidence: 99%

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Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Poklonski

Вырко

Zabrodskiĭ

2010

Semicond. Sci. Technol.

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Expressions for the pre-exponential factor σ 3 and the thermal activation energy ε 3 of hopping electric conductivity of electrons via hydrogen-like donors in n-type gallium arsenide are obtained in the quasiclassical approximation. Crystals with the donor concentration N and the acceptor concentration KN at the intermediate compensation ratio K (approximately from 0.25 to 0.75) are considered. We assume that the donors in the charge states (0) and (+1) and the acceptors in the charge state (−1) form a joint nonstoichiometric simple cubic 'sublattice' within the crystalline matrix. In such sublattice the distance between nearest impurity atoms is R h = [(1 + K)N] −1/3 which is also the length of an electron hop between donors. To take into account orientational disorder of hops we assume that the impurity sublattice randomly and smoothly changes orientation inside a macroscopic sample. Values of σ 3 (N) and ε 3 (N) calculated for the temperature of 2.5 K agree with known experimental data at the insulator side of the insulator-metal phase transition.3 However, in GaAs with high concentration of irradiation-induced defects dc hopping conduction is observed [5] even at a temperature of 100 K.

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Section: Comparison Of Calculations With Experimental Data For N-gaassupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Poklonski

Вырко

Zabrodskiĭ

2010

Semicond. Sci. Technol.

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Conducción hopping en películas nanocristalinas del compuesto CZTSe usado como capa absorbente en celdas solares

Sena

Mateus²,

Dussán³

2014

Univ. Sci.

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Here, we present electronic and transport properties of quaternary Cu2ZnSnSe4 (CZTSe) nanocrystalline films fabricated by physical co-evaporation. The samples were grown on soda-lime glass substrates and synthesis parameter ranges, Cu mass and substrate temperature were varied. Using thermopower at room temperature and spectral transmittance we found that the material is characterized by n-type conductivity and forbidden energy bandwidth of 1.7 eV, respectively. Electrical conductivity means (low temperature region; 90-200 K) showed that conductivity processes occur via variable range hopping between extended states. We obtained the parameters characterizing this mechanism, activation energy (Whopp), and range hopping (Rhopp), by employing the percolation theory and diffusion model. The density of defect states near the Fermi level of the material, N (EF) of the CZTSe samples is about 3,403x10 18 cm -3 eV -1 . We found a correlation between deposition parameters and electrical properties and observed a parameter influence on the formation of additional phases in the compound.

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Hopping photoconductivity and the effectiveness of phonon detection in GaAs:Zn bolometers

Cited by 2 publications

References 10 publications

Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Conducción hopping en películas nanocristalinas del compuesto CZTSe usado como capa absorbente en celdas solares

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