Horizontal growth of MoS<sub>2</sub> nanowires by chemical vapour deposition

Han, Shuming; Yuan, Cailei; Luo, Xingfang; Cao, Yunpeng; Yu, Ting; Yang, Yong; Li, Qinliang; Ye, Shuangli

doi:10.1039/c5ra13733k

Cited by 24 publications

(13 citation statements)

References 26 publications

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“…Current reports of 1D metal chalcogenide layered materials are mostly centered on transition metal dichalcogenides (TMDCs) such as MoS2. [26], [27] Recently IV-VI monochalcogenide layered materials have been proposed as materials for sustainable electronic and photonic devices. [28] Among these materials, SnSe with a layered puckered crystal structure, has the advantage of being relatively Earth abundant and non-toxic compared to other popular materials for energy and memory device applications, such as Bi2Te3 and GeTe.…”

Section: Introductionmentioning

confidence: 99%

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Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Davitt

Manning

Robinson

et al. 2020

Adv Materials Inter

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Here we report the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{ n BuSe(CH2)3Se n Bu}] single source diselenoether precursor. CVD with this single source precursor allows morphological and compositional control of the SnSex structures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure could be controllably synthesized in two growth directions, either <011> or <100>. The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a <011> growth direction displayed a reversible polarity dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 10 3 without the use of a current compliance limit was seen, illustrating the potential use of SnSe nanowires for low power non-volatile memory applications.

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Section: Introductionmentioning

confidence: 99%

“…Current reports of 1D metal chalcogenide layered materials are mostly centered on transition metal dichalcogenides (TMDCs) such as MoS 2 . [ 26,27 ]…”

Section: Introductionmentioning

confidence: 99%

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Davitt

Manning

Robinson

et al. 2020

Adv Materials Inter

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“…Moreover, in this modified CVD-grown process, the SiO 2 /Si substrate is tilted so as to reduce the downstream depletion of precursors. Under the conditions of high growth temperature and the precursor’s sufficient atmosphere, the MoS 2 crystals are more likely to grow under “kinetic” conditions rather than thermodynamic ones, which is typical for MoS 2 nanostructures with high precursor feedstock. , Therefore, the increase in precursor concentration will promote the crystal growth rate and result in the formation of bowl-like MoS 2 nanostructures.…”

mentioning

confidence: 99%

Magnetic Enhancement for Hydrogen Evolution Reaction on Ferromagnetic MoS₂ Catalyst

et al. 2020

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Numerous efforts in improving the hydrogen evolution reaction (HER) performance of transition metal dichalcogenides mostly focus on active sites exposing, vacancy engineering, and phase engineering. However, little room is left for improvement in these approaches. It should be noted that efficient electron transfer also plays a crucial role in catalytic activity. In this work, by employment of an external vertical magnetic field, ferromagnetic bowl-like MoS 2 flakes can afford electrons transmitting easily from a glassy carbon electrode to active sites to drive HER, and thus perform magnetic HER enhancement. The ferromagnetic bowl-like MoS 2 flakes with an external vertical magnetic field can provide a roughly doubled current density compared to that without an external vertical magnetic field at a constant overpotential of −150 mV. Our work may provide a new pathway to break the bottleneck for further improvement of HER performance and also paves the way to utilize the magnetic enhancement in widely catalytic application.

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“…A wide variety of ex situ studies has investigated the role of growth parameters (pressure, temperature, precursor vapor concentration) [2,[25][26][27][28][29] and has postulated different nucleation and growth mechanisms. [30][31][32] More detailed understanding has been provided by recent in situ studies that have investigated chalcogenide growth dynamics in real time.…”

Section: Crystallization and Structural Evolution During Growthmentioning

confidence: 99%

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

et al. 2021

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Layered metal chalcogenide materials, such as MoS2 and Bi2Te3, have found important applications as 2D materials in emerging electronic devices. To create nanoscale layered chalcogenide materials with precisely controlled structures and properties, it is critical to understand and control how they evolve and transform under various conditions. This Minireview presents an overview of recent research focused on using in situ characterization to understand the atomic‐scale details of transformations during growth, under exposure to reactive chemical and thermal environments, and on interfacing with other materials. These efforts have used techniques including in situ transmission electron microscopy (TEM), X‐ray spectroscopy, and optical methods to understand nanoscale transformations. These in situ studies have provided a substantially improved understanding of transformation mechanisms in layered chalcogenide materials, which is an important step toward the use of these interesting materials in a variety of electronic and electrochemical devices.

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Horizontal growth of MoS₂ nanowires by chemical vapour deposition

Cited by 24 publications

References 26 publications

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Magnetic Enhancement for Hydrogen Evolution Reaction on Ferromagnetic MoS₂ Catalyst

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Horizontal growth of MoS2 nanowires by chemical vapour deposition

Cited by 24 publications

References 26 publications

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Magnetic Enhancement for Hydrogen Evolution Reaction on Ferromagnetic MoS2 Catalyst

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Horizontal growth of MoS₂ nanowires by chemical vapour deposition

Magnetic Enhancement for Hydrogen Evolution Reaction on Ferromagnetic MoS₂ Catalyst