Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors

Sciacca, M. Dean; Mayur, A. J.; Kim, Hyun-Jung; Miotkowski, I.; Ramdas, A. K.; Rodríguez, S.

doi:10.1103/physrevb.53.12878

Cited by 24 publications

(54 citation statements)

References 12 publications

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“…As shown by Berreman [7], for a sufficiently thin film, the minimum in transmission corresponds to ω TO in normal incidence whereas for oblique 6 BOMEM Inc., 450 St-Jean Ave., Quebec, Canada, G2E5S5. 7 Janis Research Company, Inc., 2 Jewel Drive, Wilmington, MA 01887-0896, USA.…”

Section: Resultsmentioning

confidence: 99%

“…Under the high resolution accessible in Fourier transform spectroscopy, this LVM displays a fascinating fine structure which can be attributed to a substitutional impurity whose vibrations are accompanied by those of its neighbouring atoms [4][5][6]. In this paper, we present experimental data on • in (a) and 50…”

Section: Introductionmentioning

confidence: 99%

“…The computation of the absorption coefficient due to ZnTe diffused into GaSb is carried out following the procedure given by Wemple and Seman [14] 9 . In figure 3(a), the computed [6] 10 absorption spectra for 64 Zn Ga (B) and 66 Zn Ga (C) are compared with the experimental absorption spectrum (A) whereas in figure 3(b) Zn Sb (E). The computed spectra using the stretching (α) and bending (β) force constants in table 2 are chosen on the basis of optimum agreement with the experimental absorption maxima.…”

Section: The Origin Of the Fine Structure Of The Lvmmentioning

confidence: 99%

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Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer

Kim¹,

Tarhan²,

Chen³

et al. 2006

Semicond. Sci. Technol.

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A localized vibrational mode (LVM) with a remarkable fine structure is observed in the infrared transmission spectrum of a ZnTe epilayer grown with molecular beam epitaxy (MBE) on a GaSb substrate. On the basis of the Zn and Te deposited on the GaSb substrate during the MBE growth of ZnTe, and assuming diffusion of Zn and Te into GaSb, the LVM is attributed to Zn, substitutionally replacing either the cation, Ga (Zn Ga ), or the anion, Sb (Zn Sb ). The frequency of the LVM and its fine structure can then be interpreted in terms of the infrared active modes of 64 Zn substituting for Sb as an anti-site impurity and treating the centre as an XY 4 quasimolecule. With X≡ 64 Zn and Y≡ 69 Ga and 71 Ga, occupying the nearest-neighbour sites reflecting all the possible combinations and permutations as well as the natural isotopic abundance of Ga, the fine structure of the LVM can be accounted for quantitatively.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: The Origin Of the Fine Structure Of The Lvmmentioning

confidence: 99%

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Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer

Kim¹,

Tarhan²,

Chen³

et al. 2006

Semicond. Sci. Technol.

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“…Fe, M-the mass of the X atom and ω ± (Γ 5 ) refers to the angular frequencies of the two Γ 5 modes. We note that, in the Γ 1 and Γ 3 modes, the central atom remains stationary while this is not the case for the Γ 5 modes whose frequencies depend on M. In many compound semiconductors [14], k r is one to two orders of magnitude greater than k θ and, in a first approximation, the contribution proportional to k θ can be disregarded. If bond bending is neglected, ω-(Γ 5 ) = 0 and It is this mass dependence of the LVM angular frequency that we employ in Sec.…”

Section: Theoretical Formalismmentioning

confidence: 99%

“…We mention, for example, the determination of the frequencies of the local vibrational modes (LVM) of light impurities substituting for either the group II or VI host atom in a II-VI semiconductor and their dependence on isotopic composition [13,14]. The LVM of transition metal ions of the iron group substituting for the cations at random sites in II-VI semiconductors having the zinc-blende structure have also been observed by Mayur et al [15] in infrared absorption with as many lines as there are isotopes of the impurity and with intensities proportional to their natural abundances.…”

Section: Introductionmentioning

confidence: 99%

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Colignon

Mailleux

Kartheuser

et al. 1998

Solid State Communications

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A theoretical study of the isotopic-mass dependence of the internal transitions of Fe 2+ at a cation site in a cubic zinc-blende semiconductor is presented. The model used is based on crystal-field theory and includes the spinorbit interaction and a weak dynamic Jahn-Teller coupling between the 5 Γ 5 excited manifold of Fe 2+ and a local vibrational mode (LVM) of Γ 5 symmetry. The mass dependence of the LVM frequency is described, in the harmonic approximation, within two different limits: the rigid-cage model and a molecular model. In the rigidcage model, the Fe 2+ ion undergoes a displacement but the rest of the lattice is fixed. In this case, a simple M -1l2 dependence of the frequency is obtained and the Jahn-Teller energy, E JT is independent of the mass. In the molecular model, the four nearest neighbors of the magnetic ion are allowed to move and the LVM then behaves as the Γ 5 mode of a MX 4 tetrahedral molecule leading to a more complicated dependence of the frequency on the isotopic mass and to a mass-dependence of E JT . The theoretical results obtained with these two models are compared with the observed isotopic shifts of the zero-phonon lines in InP:Fe and GaP:Fe corresponding to an optical transition between the vibronic Γ 1 ground state and the lowest Γ 5 state originating from the 5 Γ 5 excited orbital multiplet. A prediction of the isotopic shifts of the zero-phonon line in GaAs:Fe is also presented.

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Semiconductors, Isotopically Engineered

Häller

2003

Digital Encyclopedia of Applied Physics

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Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors

Cited by 24 publications

References 12 publications

Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer

Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Semiconductors, Isotopically Engineered

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