Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs

Raghunathan, Uppili S.; Martinez, Rafael Perez; Wier, Brian R.; Omprakash, Anup P.; Ying, Hanbin; Bantu, Tikurete G.; Yasuda, Hiroshi; Menz, Philipp; Cressler, John D.

doi:10.1109/ted.2018.2829184

Cited by 11 publications

(3 citation statements)

References 19 publications

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“…Same conclusions have been obtained on different new generations SiGe technologies, and improvements on the base process (stabilization of the doping species) and on the passivation technique have led to mature technologies, thanks to the fine determination of events occurring within the volumes or interfaces of the active zones. Similar studies have been developed on recent technologies, featuring current gain enhancement in SiGe HBTs under inverse and forward operation modes, and have been analyzed with TCAD models [19]. Other studies on SiGe and III-V HBT technologies have taken full advantage of electrical and LFN measurements, with dedicated models.…”

Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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SiGe and GaN technologies have achieved rapid development over the last two decades. High level of RF circuit integration on Si low cost substrates open the way for large development of SiGe HBTs, while needs for high power density make GaN HEMT a key technology for solid state power modules. As both of these technologies achieve very elevated frequencies, they become strong contenders to GaAs technologies. Then reliability studies are needed to improve the process at the lower technology readiness level scale, and to stabilize the technological process till the final qualification step. To make an efficient diagnostic on the causal origin of the physical root mechanisms involved during the application of a stress, a multi-tool approach is mandatory to secure the diagnostic. In this paper, case studies on SiGe HBT and GaN HEMT stressed devices are proposed through the cross-analysis of low frequency noise spectral densities, of electrical transient measurements, and of TCAD simulations.

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Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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“…First, the reduction of the minority carrier injection into the polysilicon emitter and base. Second, the carrier mobility degradation due to hot carrier released atomic hydrogens passivation of dangling bonds along the grain boundaries in polysilicon emitter[8,13]. In addition, current gain enhancement, and more importantly, is to the best of our knowledge the first time to be reported under MM stress condition.…”

mentioning

confidence: 96%

“…In addition, current gain enhancement, and more importantly, is to the best of our knowledge the first time to be reported under MM stress condition. With regard to the hot carrier damage behaviors, it has been claimed that MM hot carriers are more likely to stop near the polysilicon-silicon interfaces of the emitter and base, but Auger hot-carrier generation can happen deep within the polysilicon emitter and base[13]. Our results suggest otherwise, i.e., it is speculated that MM hot carriers and Auger hot carriers show similar bond dissociation and defect generation behaviors at the SiO2/Si interfaces and PE grain boundaries.To further demonstrate this abnormal noise spectra behavior especially in MM stressed DUTs.…”

mentioning

confidence: 99%

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Zhu

Zhang²,

et al. 2023

IEEE J. Electron Devices Soc.

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Low frequency (LF) noise is a powerful and nondestructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.

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High-power microwave pulse induced failure on InGaP/GaAs heterojunction bipolar transistor

Mao

Huang

Xiang

et al. 2022

Microelectronics Reliability

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Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs

Cited by 11 publications

References 19 publications

Non-destructive techniques for evaluating the reliability of high frequency active devices

Non-destructive techniques for evaluating the reliability of high frequency active devices

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

High-power microwave pulse induced failure on InGaP/GaAs heterojunction bipolar transistor

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