Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K

Study on the relation between interface trap creation and MOSFET degradation under channel hot carrier stressing at cryogenic temperatures

“…Furthermore, ΔI on at 77 K increases steeper than that at 150 K. There are two stages of change at 77 K and 150 K, which may be due to the fact that the influence of the interface trap was dominant in the beginning, but the bulk trap became dominant in the middle of the change. 22) Figure 9 shows the stress time evolutions of ΔD it at respective temperatures. It is confirmed that the slope of the relation between the stress time and ΔD it becomes steeper at cryogenic temperatures, especially at 77 K, which is like the ΔI on as shown in Fig.…”

“…20) However, it is not known whether existing degradation mechanisms can be directly adapted at cryogenic temperatures. 21) While much attention has been paid to the reliability of MOSFETs at cryogenic temperatures, 22,23) the focus has not been on interface traps. Therefore, the purpose of this study is to understand the degradation of channel hot carriers (CHCs) at cryogenic temperatures using interface traps calculated directly from the charge pumping method.…”

Low-temperature CMOS technology for high-performance computing: development and challenges

“…而部分可靠性退化, 如晶体管中的热载流子 (hot carrier injection, HCI) 效应, 会随着自由程 的增加而加剧. 因此, 报道显示, 随着温度的降低, 器件中的热载流子现象将逐渐加剧 [18] , 影响低温芯 片的可靠性. 此外, 随着温度的降低, 特别是对于亚 100 nm 短沟道晶体管而言, 器件退化过程中产生 的界面缺陷会导致极低温下额外的缺陷耦合效应和界面噪声 [19] .…”