Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length

On, Nuri; Kim, Bo Kyoung; Lee, Sueon; Kim, Eun Hyun; Lim, Jun Hyung; Jeong, Jae Kyeong

doi:10.1109/ted.2020.3032383

Cited by 26 publications

(17 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is a general behavior for coplanar a‐IGZO TFTs with SiO 2 passivation. [ 15,16,31,32 ] Chen et al reported that hydrogen diffuses into the intrinsic a‐IGZO for the coplanar oxide TFTs. [ 15,31 ] Therefore, the TFT becomes more depletion mode by decreasing L .…”

Section: Resultsmentioning

confidence: 99%

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Lee

Islam

et al. 2021

Adv Eng Mater

View full text Add to dashboard Cite

The short channel coplanar amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor (TFT) is reported by introducing a ZrAlO x (ZAO) interlayer deposited by spray pyrolysis at the substrate temperature of 350 °C. The atomic ratio (at. %) of In:Ga:Zn:O is 1:2.5:1.2:5.2 in the a‐IGZO film deposited by sputtering. The a‐IGZO TFT with ZAO layer with 0.87 μm channel length exhibits the field‐effect mobility of 6.44 cm2 V−1 s−1, the threshold voltage of −2.16 V, and on/off current ratio of 7.6 × 107. It is found from the X‐ray photoelectron spectroscopy depth profile and high‐resolution transmission electron microscope analysis that some Zr atoms diffuse into the a‐IGZO underlayer. The formation of ZrO bonds on a‐IGZO surface region reduces the carrier concentration in the a‐IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This reduces the field‐effect mobility of 10 μm channel length TFT from 21.86 to 14.01 cm2 V−1 s−1, but the ZAO layer protects the a‐IGZO from the diffusion of H2O and O2. As a result, 0.87 μm TFT shows high on/off current ratio and stable under 85 °C and 85% relative humidity test for 2 days.

show abstract

Section: Resultsmentioning

confidence: 99%

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Lee

Islam

et al. 2021

Adv Eng Mater

View full text Add to dashboard Cite

show abstract

“…In order for oxide TFTs to replace the Si CMOS backplane, the facile integration process of submicron scale devices should be developed on the glass substrate. Furthermore, short‐channel effects such as drain‐induced barrier lowering (DIBL), hot carrier effects (HCE), and inappropriate leakage current are major concerns 17–19 . Non‐planar architectures such as three‐dimensional (3D)‐vertical, recess channel, or FinFET structures can provide solutions to these fundamental issues.…”

Section: Introductionmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

Self Cite

View full text Add to dashboard Cite

This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

show abstract

“…For the reliable incorporation of a-IGZO TFTs into the driving circuits for display application, it is crucial to understand the degradation mechanisms of the device under bias stresses. Many research groups have reported stress-induced instability characteristics [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ]. Most of these studies have focused on the verification of degradation mechanisms, such as charge trapping, hole trapping, and donor-state creation.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

et al. 2021

View full text Add to dashboard Cite

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

show abstract

Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length

Cited by 26 publications

References 38 publications

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Contact Info

Product

Resources

About

Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length

Cited by 26 publications

References 38 publications

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Contact Info

Product

Resources

About

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer