Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

Abstract

We report a hot carrier effect of the thin-film silicon-on-insulator (SOI) power metal oxide semiconductor field-effect transistor (MOSFET) for scaling under a constant drain electric field. The device degradation caused by the hot carrier effect was enhanced by shrinking a channel length even at the constant drain electric field because of the parasitic bipolar effect.

AC hot carrier effect of the thin-film silicon-on-insulator power n-MOSFET

“…2(a), 2(b), and 2(c). 18) The electric field distribution is simulated by using TCAD 24) and shown as a dotted line in Fig. 2(a).…”

“…However, the parasitic bipolar effect is enhanced by decreasing channel length and this effect accelerates the hot carrier (HC) effect especially at the gate stress voltage near-threshold voltage. [17][18][19] We previously reported on the HC effect of thin-film SOI power MOSFETs under constant drain electric field. 17) In practical applications, the AC HC effect is important for lateral double-diffused power MOSFETs (LDMOS) based on the bulk Si technology.…”

Hot carrier effect and positive bias temperature instability of a thin-film silicon-on-insulator power MOSFET at high temperature

“…4. The parasitic bipolar effect appears at a high drain voltage and this effect at 573 K is weak 5,7,19) because the impact ionization coefficient decreases as temperature increases.…”

“…However, those of the thin-film SOI power MOSFET at high temperature were not discussed in previous studies. [5][6][7][18][19][20][21][22][23][24][25][26] For practical use, it is necessary to understand the degradation characteristics of a thin-film SOI power MOSFET at high temperature. Thus, we explore the hot carrier effect and PBTI of a thin-film SOI power MOSFET at high temperature experimentally.…”

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

“…On the other hand, in a DC-DC converter, a MOSFET on a silicon-on-insulator (SOI) substrate is used as a highfrequency switching device owing to its small parasitic capacitance, small leakage current, and immunity to temperature-induced latch-up. [5][6][7][8][9][10][11][12][13][14][15][16] However, the SOI MOSFET has a heat dissipation issue because it has a low-thermalconductivity SiO 2 layer used as a buried layer. 12,[17][18][19][20][21][22] This layer affects the increase in the operating temperature of SOI devices.…”