Hot carrier effects in Si-SiGe HBTs

Borgarino, M.; Kuchenbecker, James A.; Tartarin, Jean-Guy; Bary, L.; Kovacic, T.; Plana, R.; Fantini, Fausto; Graffeuil, J.

doi:10.1109/7298.956701

Cited by 8 publications

(2 citation statements)

References 32 publications

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“…In the present study, hot carrier (HC) and ionizing radiations (IR) effects on the RF Sparameters are illustrated. HC stress was developed by the application of reverse base-emitter voltage stresses [16]; these conditions are relevant for reliability concerns as the base of the HBT devices is highly doped. The d.c effects of the HC stress have been investigated first by the observation of the forward Gummel plots (Fig.…”

Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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SiGe and GaN technologies have achieved rapid development over the last two decades. High level of RF circuit integration on Si low cost substrates open the way for large development of SiGe HBTs, while needs for high power density make GaN HEMT a key technology for solid state power modules. As both of these technologies achieve very elevated frequencies, they become strong contenders to GaAs technologies. Then reliability studies are needed to improve the process at the lower technology readiness level scale, and to stabilize the technological process till the final qualification step. To make an efficient diagnostic on the causal origin of the physical root mechanisms involved during the application of a stress, a multi-tool approach is mandatory to secure the diagnostic. In this paper, case studies on SiGe HBT and GaN HEMT stressed devices are proposed through the cross-analysis of low frequency noise spectral densities, of electrical transient measurements, and of TCAD simulations.

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Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

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“…This effect can be explained and clarified through the measurement of low-frequency noise such as 1= f noise. [16][17][18] In addition, in some reports, some effects like the observed increase in access resistance have been suggested to be due to the passivation of base dopant impurities after hydrogen atom release during electrical stressing. 19,20) One possible reason is the previously pointed out increase in R B after the mixed-mode stressing.…”

Section: Device Modeling After Mixed-mode Stressingmentioning

confidence: 99%

Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors

Hung¹,

Liao²,

Huang³

et al. 2008

jjap

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A specialized autoclave has been developed for the measurement of crystal growth and dissolution rates in aqueous salt solutions at temperatures up to 140°C. Contamination during crystal growth or dissolution has been eliminated by having the solution in contact only with the chemically inert materialsglass, Kel-F and Teflon.Provision has been made for sampling both solution and solid phases during the reactions and the utility of the apparatus is demonstrated by measuring reproducibly, the crystal growth rate of calcium sulphate dihydrate (CaS04.2H20) in aqueous solutions at 100°C.

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Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

Huang

Chen

Huang

et al. 2008

Microelectronics Reliability

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Hot carrier effects in Si-SiGe HBTs

Cited by 8 publications

References 32 publications

Non-destructive techniques for evaluating the reliability of high frequency active devices

Non-destructive techniques for evaluating the reliability of high frequency active devices

Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors

Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

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