Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment

Quon, D.; Gopi, Paramesh; Sonek, G. J.; Li, G.P.

doi:10.1109/16.324594

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Device Modeling After Mixed-mode Stressing1

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2023

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Cited by 19 publications

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“…[16][17][18] In addition, in some reports, some effects like the observed increase in access resistance have been suggested to be due to the passivation of base dopant impurities after hydrogen atom release during electrical stressing. 19,20) One possible reason is the previously pointed out increase in R B after the mixed-mode stressing. The variation in the base resistance R B also affects the maximum oscillation frequency and RF power performance.…”

Section: Device Modeling After Mixed-mode Stressingmentioning

confidence: 95%

Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors

Hung¹,

Liao²,

Huang³

et al. 2008

jjap

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A specialized autoclave has been developed for the measurement of crystal growth and dissolution rates in aqueous salt solutions at temperatures up to 140°C. Contamination during crystal growth or dissolution has been eliminated by having the solution in contact only with the chemically inert materialsglass, Kel-F and Teflon.Provision has been made for sampling both solution and solid phases during the reactions and the utility of the apparatus is demonstrated by measuring reproducibly, the crystal growth rate of calcium sulphate dihydrate (CaS04.2H20) in aqueous solutions at 100°C.

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