Hot-carrier instability in IGFET’s

Abbas, Sura Adil; Dockerty, R. C.

doi:10.1063/1.88387

Cited by 104 publications

(15 citation statements)

References 4 publications

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“…With these experiments, Nicollian et al showed that there was a one-to-one correspondence between the hydrogen lost (i.e., reduced activity) and negative charge produced in a hydrated SiO layer in the presence of electron currents. Subsequently, other researchers observed threshold voltage instability and channel transconductance degradation in MOS transistors [33]- [35] where hot carriers were generated using the source-drain electric field.…”

Section: Degradation Of Transistors and Reliability Involving Hymentioning

confidence: 99%

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess

Kizilyalli²,

Lyding

1998

IEEE Trans. Electron Devices

152

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Section: Degradation Of Transistors and Reliability Involving Hymentioning

confidence: 99%

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Hess

Kizilyalli²,

Lyding

1998

IEEE Trans. Electron Devices

152

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“…During a strongly "on" condition with gate and drain voltages high, electrons flowing from source to drain can be scattered by the lattice and injected over the potential energy barrier at the oxide-silicon interface [4,36,37]. This problem will be present in all VLSI technologies as shorter channels are approached, although it will lessen with lower power supplies.…”

Section: % Stabilitymentioning

confidence: 95%

A Silicon and Aluminum Dynamic Memory Technology

Larsen

1980

IBM J. Res. & Dev.

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The Silicon and Aluminum Metal Oxide Semiconductor (SAMOS) technology is presented as a high-yield, low-cost process to make one-device-cell random access memories. The characteristics of the process are a multilayer dielectric gate insulator (oxide-nitride), ap-type polysilicon field shield, and a doped oxide diffusion source. Added yield-enhancing features are backside ion implant gettering, dual dielectric insulators between metal layers, and circuit redundancy. A family of chips is produced using SAMOS, ranging from 18K bits to 64K bits. System features such as on-chip data registers are designed on some chips. The chip technology is merged with "flip-chip" packaging to provide one-inchsquare modules from 72K bits through 512K bits, with typical access times from 90 ns to 300 ns. IntroductionIn October 1978, a new semiconductor memory technology was introduced by IBM Corporation's General Technology Division. This new technology is used to produce a family of chips with densities of 18K-, 32K-, 36K-, and 64K-bits per chip [1]. The Silicon and Aluminum Metal Oxide Semiconductor (SAMOS) process is a metal gate technology which provides a distinct productivity leap over previous IBM 2K-and 4K-bit products through the combination of one-device memory cells [2. 3] and new process concepts. Among these are 1) backside ion implant for leakage control, 2) doped oxide self-aligned diffusion source, 3) multidielectric gate insulator, 4) ptype polysilicon field shield for isolation and cell capacitance, 5) lift-off aluminum metallurgy, and 6) quartz-polyimide passivation between metal layers. The use of new processes poses new challenges in device physics. In particular, the use of a nitride layer in the gate dielectric prevents further oxidation of the gate during polysOicon oxidation and provides low defect densities due to the dual dielectric. At the same time, the hot electron [4] effects were intensified by the use of nitride, and they had to be understood, characterized and brought under routine process control. These effects are not unique to SAMOS, however, and will be encountered by all technologies of small dimensions.

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“…The barrier height between silicon and silicon dioxide is 3.1 eV. Equation 1 relates the electron temperature-(Te) and the silicon field, where k is the Boltzmann constant, A is the electron mean free path and c is the energy loss per optical phonon collision.…”

Section: Description Of the Phenomenonmentioning

confidence: 99%