Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

“…The MOSFETs with shorter gate length can lead to impact-ionization induced avalanche breakdown [8,9] due to the high lateral electric field at the drain end of the channel. This high field effect is important for reliability issues [8,10] because the influence of MOSFET degradation on CMOS circuits due to an impact ionization effect can be a concern.…”

“…This high field effect is important for reliability issues [8,10] because the influence of MOSFET degradation on CMOS circuits due to an impact ionization effect can be a concern. Conventionally, direct-current (DC) measurements are employed to extract DC characteristics of the avalanche effects [11].…”

Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors

“…This issue had been readily solved by using the multi-finger gate structure. However, some challenges still remain particularly on the hot-carrier reliability and accurate device models for circuit designs [7][8][9]. The DC and high-frequency models for the multi-finger nanometer MOS transistors are still not very precise because of some uncertainties on the charge and electric field distribution around the fingers [10].…”

“…The DC and high-frequency models for the multi-finger nanometer MOS transistors are still not very precise because of some uncertainties on the charge and electric field distribution around the fingers [10]. It was found that the threshold voltage and the DC current-voltage characteristics of multi-finger transistors depart greatly from its equivalent single-finger transistor [9]. The subthreshold characteristics of RF CMOS devices are also important because the MOS transistor operated at subthreshold mode has demonstrated some unique features particularly for low-voltage and low-power operation [11][12][13].…”

Modeling and characterization of radio-frequency characteristics of multi-finger nanometer MOS transistors

“…Process for hundred gigahertz MOS devices has been developed and some simple MOS RFICs have been made [5]- [6]. However, challenges still remain particularly on the hot-carrier reliability and accurate device models for circuit designs [7][8]. The precise model for the RF characteristics of the multi-finger nanometer MOS transistors is still not available.…”