Hot carrier reliability of RF N- LDMOS for S Band radar application

Investigating Reliability and Stress Mechanisms of DC and Large-Signal Stressed CMOS 65-nm RF-LDMOS by Gate Current Characterization

“…V d =9.5 V is in about the same order of magnitude as the gate current in case C. This stress mechanism would for example be present in class A-operation at V dd =5 V due to load line characteristics. After 26 hours of DC stress at V g /V d =0.7V/9.5V, neither S nor V tsat degrade significantly, which indicates that no defects are created in the channel and is also in coherence with the drift of I dQ at only -1% [15]. Tunneling in the channel region clearly affects I dQ when comparing to case C that suffered from I dQ drift at -11%.…”

“…It is known that PA RF performance such as output power degrade from stress [15] but one could wonder how the choice of quiescent bias point influences the amount of degradation in RF operation. To the authors' knowledge, there have been no studies on trying to link the gate current characteristics to the degradation behavior in RF operation.…”