Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair excitations has a strong dependence on doping, which makes carrier multiplication gate-tunable. We also predict that the number of excited pairs as well as the characteristic time of the cascade scale linearly with photo-excitation energy. These dependences, as well as sharply peaked angular distribution of pair excitations, provide clear experimental signatures of carrier multiplication.Converting light to electrical currents or voltages is a complex, multi-step process which involves photoexcited particle-hole pairs undergoing scattering by ambient charge carriers, by other photoexcited carriers and by lattice vibrations. One of the key questions in the field of optoelectronics is identifying materials in which carrier multiplication can occur, i.e. a single absorbed photon yielding a large number of particle-hole pairs as a result of the primary photoexcited pair producing secondary pairs. Efficient carrier multiplication relies on a combination of characteristics such as a wide band of states with a large phase space density for pair excitations, strong electron-electron scattering, and not too strong electronphonon interaction. While graphene is by no means a unique example of a system with these properties, it is believed to fit the bill better than other materials. This has motivated an intense investigation of photoexcitation processes in graphene-based systems [1][2][3][4][5][6][7][8][9][10][11][12].One aspect of graphene that distinguishes it from other materials is its truly two-dimensional structure which renders electronic states fully exposed. Photoexcitation in such a system generates photoexcited carriers that can in principle be extracted by a vertical transfer process, e.g. in a sandwich-type tunneling structure. Vertical carrier extraction eliminates carrier loss in a lateral transport betwen photoexcitation region and contacts, often an important limiting factor for optoelectronic response in semiconductor systems.Despite intense interest, the photo-excitation cascade in graphene remains poorly understood. Theory predicts that the linear dispersion of charge carriers acquires a negative curvature due to electron-electron interactions, d 2 (k)/dk 2 < 0 [13], which inhibits decay via electronelectron scattering in undoped graphene [11]. However, while the prediction of negative curvature appears to be in agreement with transport measurements [14], ARPES experiments support the notion of interaction-mediated decay [15,16]; interaction-induced quasiparticle decay remains the subject of ongoing debate [11,12,17].Besides its immediate utility for optolectronics, photoexcitation cascade in graphene is of interest because of its analogy with jets in particle physics, which are nar- row cones of hardrons and other particles produced in high-energy particle detectors. Massless...