2004
DOI: 10.1063/1.1649806
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Hot electron spin polarization and Schottky barrier in spin-valve transistor

Abstract: We have explored phenomenological temperature dependence of hot electron magnetotransport in a spin valve transistor. We stress spin polarization of hot electrons and spatial inhomogeneity of Schottky barriers to explain the peculiar temperature and spin dependence of collector currents. Qualitative trends are established for collector current with changes in temperature, thickness of spin-valve base, along with height and width of Schottky barriers.

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Cited by 18 publications
(1 citation statement)
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“…(7, pp. 380-384) Furthermore, it was demonstrated by Hong and Wu that the spin dependent collector current in a hot-electron spin-valve transistor can be manipulated through changing Schottky barrier characters such as height and width (49). This result will be useful for device design.…”
Section: Anticipated Results and Conclusionmentioning
confidence: 99%
“…(7, pp. 380-384) Furthermore, it was demonstrated by Hong and Wu that the spin dependent collector current in a hot-electron spin-valve transistor can be manipulated through changing Schottky barrier characters such as height and width (49). This result will be useful for device design.…”
Section: Anticipated Results and Conclusionmentioning
confidence: 99%