Hot forming of silicon sheet, silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report, May 12, 1976--August 11, 1977

Analysis of the reduction of tensile stress by post‐growth annealing methods in multicrystalline silicon wafers produced by the RST process

“…The stresses across the ribbon were estimated by thermo-mechanical simulations using the Abaqus software [4]. Due to the lack of data on the viscoelastic properties of silicon at high temperature, the simulation used the experimental data obtained by Graham et al on silicon compressed at temperatures ranging from 1100 to 1380 °C at several strain rates [5]. A vertical symmetry plane normal to the ribbon glide plane was used.…”