Hot-wire chemical vapor growth and characterization of crystalline GeTe films

Abrutis, A.; Plaušinaitienė, Valentina; Skapas, Martynas; Wiemer, C.; Gawełda, Wojciech; Siegel, J.; Rushworth, S.

doi:10.1016/j.jcrysgro.2008.10.038

Cited by 11 publications

(10 citation statements)

References 20 publications

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“…Crystallization occurs in the rhombohedral phase of GeTe. 21 Energy dispersive spectroscopy analysis confirmed an almost stoichiometric composition (Ge 46%, Te 55%). Atomic force microscopy study revealed a rather smooth surface with an average roughness value of R a % 2 nm.…”

Section: Fig 1 (Color Online)mentioning

confidence: 88%

“…Electronic addresses: wojciech.gawelda@xfel.eu and j.siegel@io.cfmac.csic.es. The aim of this work is to study the laser-induced phase switching behavior in GeTe films produced using a modified version of MOCVD, i.e., hot wire pulsed liquid injection MOCVD (HW-LI-MOCVD), 21 in order to evaluate their phase switching performance and dynamics. Moreover, we verify the phase switching feasibility not only with conventional ns but also with fs laser pulses.…”

Section: Introductionmentioning

confidence: 99%

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Dynamics of laser-induced phase switching in GeTe films

Gawełda

Siegel

Afonso

et al. 2011

Journal of Applied Physics

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High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture APL: Org. Electron. Photonics 5, 238 (2012) High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture Appl. Phys. Lett. 101, 173304 (2012) Response to "Comment on 'Silver/silicon dioxide/silver sandwich films in the blue-to-red spectral regime with negative-real refractive index'" [Appl. Phys. Lett. 101, 156101 (2012)] Appl. Phys. Lett. 101, 156102 (2012) On the determination of the glass forming ability of AlxZr1−x alloys using molecular dynamics, Monte Carlo simulations, and classical thermodynamics J. Appl. Phys. 112, 073508 (2012) Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl. Phys. Lett. 101, 133908 (2012) Additional information on J. Appl. Phys. Phase switching in GeTe thin films (grown using a modified metal organic chemical vapor deposition system) upon pulsed femtosecond and nanosecond laser irradiation has been studied. Two in situ methods, i.e., optical microscopy and real-time reflectivity measurements, have been used in order to compare the optical response before and after phase change and to follow the phase change dynamics with a time resolution close to 400 ps. The results show that cycling is possible under irradiation with both fs and ns pulses using single pulses for amorphization and multiple pulses for crystallization. The use of ns pulses favors the crystalline-to-amorphous phase transformation, with a characteristic transformation time of $15 ns. The presence of the liquid phase was identified and temporally resolved, featuring a well-defined transient reflectivity state, in between those of the crystalline and amorphous phases. We have also studied the role of material configuration in the phase change dynamics and the mechanisms involved in the re-crystallization process.

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Section: Fig 1 (Color Online)mentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Dynamics of laser-induced phase switching in GeTe films

Gawełda

Siegel

Afonso

et al. 2011

Journal of Applied Physics

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“…PCRAM stores data by a thermal-induced reversible phase transition between conductive polycrystalline (set) and resistive amorphous (reset) states in a thin film of chalcogenide material. Many phase-change materials have been investigated, among which Ge 2 Sb 2 Te 5 (GST) has been widely adopted due to its fast crystallization speed and high number of overwrite cycles [4][5][6]. But the relatively low crystallization temperature of GST (about 165°C) affects severely the thermal stability of amorphous state, making PCRAM not suitable for some high-temperature application.…”

Section: Introductionmentioning

confidence: 99%

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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Phase change behavior in Al x (Sn 2 Se 3 ) 1-x (x = 0.003, 0.010, 0.023) films were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with increasing of Al content. The analysis of X-ray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping. Al 0.023 (Sn 2 Se 3 ) 0.977 has an excellent thermal stability with the crystallization activation energy of 3.79 eV and the failure time is longer than that of Ge 2 Sb 2 Te 5 film. The crystallization speed of Al 0.023 (Sn 2 Se 3 ) 0.977 film is faster than that of GST. The phase transition kinetics of Al 0.023 (Sn 2 Se 3 ) 0.977 films were investigated. The obtained values of Avrami indexes indicate that a one dimensional growth-dominated mechanism is responsible for the amorphous-crystalline transformation of Al 0.023 (Sn 2 Se 3 ) 0.977 film. We conclude that Al 0.023 (Sn 2 Se 3 ) 0.977 film is a good candidate for phasechange random-access memory applications with good thermal stability and high switching speed.

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“…Applications of Ge 2 Sb 2 Te 5 (GST) thin films are developing in electronics and optics as data storage media, such as future non‐volatile multilevel memories and in thermoelectric energy conversion . GST can be synthesized as nanowires and deposited as nanofilms by methods such as RF magnetron sputtering, metal organic chemical vapor deposition, thermal evaporation, solution‐phase deposition, and pulsed‐laser deposition (PLD) of the bulk GST material …”

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confidence: 99%