Hourglass concept for RRAM: A dynamic and statistical device model

Degraeve, R.; Fantini, A.; Raghavan, Nagarajan; Goux, L.; Clima, Sergiu; Chen, Yangyin; Belmonte, Attilio; Cosemans, Stefan; Govoreanu, B.; Wouters, Dirk J.; Roussel, Philippe; Kar, Gouri Sankar; Groeseneken, G.; Jurczak, M.

doi:10.1109/ipfa.2014.6898205

Cited by 41 publications

(38 citation statements)

References 16 publications

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“…The tables here only cover a subset of the huge collection of published resistive switching devices. Others transport models that requires iterative or numerical calculation, such as Menzel model [93], domain-based model [94,95], drift-diffusion model [96], ion-transport-recombination model [97][98][99] and hourglass model [100,101] are deliberately omitted in this article.…”

Section: Conduction Mechanism Of Published Resistive Switching Memoriesmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Conduction Mechanism Of Published Resistive Switching Memoriesmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…21 This line of reasoning is consistent with findings that charge transport occurs primarily along grain boundaries in HfO 2 and NiO memory materials, 34,35 where oxygen vacancies are thought to be the electron traps most likely involved in reversible switching and is also consistent with the "hour glass" model describing transport and switching as occurring at a narrowed "constriction" along the conductive filament. 36,37 In the LRS, the narrow constriction in the conductive filament results in higher resistance and an appreciable voltage drop across the switching region ( Fig. 13(a)).…”

Section: B Temperature Dependence Of Current Transport Behaviors Andmentioning

confidence: 99%

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Chang

Fowler

Chen

et al. 2014

Journal of Applied Physics

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Multilevel programing and charge transport characteristics of intrinsic SiOx-based resistive switching memory are investigated using TaN/SiOx/n++Si (MIS) and TiW/SiOx/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (εr) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where εr values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO2 defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H)2 defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH)2. The results provide further insights into charge transport and help identify potential switching mechanisms in SiOx-based unipolar resistive switching memory.

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“…It is worth noticing that, as expected, after the reset voltage is achieved, the charge remains practically constant since the device current is reduced in several orders of magnitude and there is no contribution to the time integral of the charge. As reported in [11][12][13][14][15][16], the characteristic conductive filaments responsible for the RS operation in conductive bridge cells are broken when the reset process takes place. We take profit from this fact to extract the reset voltage (V rst ) and the reset current (I rst ).…”

Section: Memristor Experimental Analysis For Modeling Purposesmentioning

confidence: 77%