How do oxygen vacancies affect carrier transport and interface states in β-Ga2O3/4H-SiC heterojunction photodetectors at elevated temperatures?
Xiaoning Zhang,
Ling-Xu Zhao,
Huanhuan Zhao
et al.
Abstract:The temperature and boundary oxygen vacancy can individually decrease the bandgap of the β-Ga2O3/4H-SiC heterojunction, but the coupling effect would increase the bandgap.
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