2024
DOI: 10.1039/d4tc03284e
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How do oxygen vacancies affect carrier transport and interface states in β-Ga2O3/4H-SiC heterojunction photodetectors at elevated temperatures?

Xiaoning Zhang,
Ling-Xu Zhao,
Huanhuan Zhao
et al.

Abstract: The temperature and boundary oxygen vacancy can individually decrease the bandgap of the β-Ga2O3/4H-SiC heterojunction, but the coupling effect would increase the bandgap.

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