2021
DOI: 10.1016/j.nima.2020.164957
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How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

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Cited by 6 publications
(6 citation statements)
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“…For certain structures, one could expect even greater scintillation enhancements on the order of ~4 n 2 in the ray-optics approximation ( 44 ) or ~4π n 2 for periodic structures on the wavelength scale ( 46 , 47 ) (where n is the index of refraction). For example, for a thin high-index material such as doped GaAs, which also scintillates at room temperature ( 49 ), enhancements on the order of ~50 and ~150 could be respectively achieved in the two regimes (over a 2π collection solid angle).…”
Section: Observation Of Strongly Enhanced Scintillation Induced By X-...mentioning
confidence: 99%
See 1 more Smart Citation
“…For certain structures, one could expect even greater scintillation enhancements on the order of ~4 n 2 in the ray-optics approximation ( 44 ) or ~4π n 2 for periodic structures on the wavelength scale ( 46 , 47 ) (where n is the index of refraction). For example, for a thin high-index material such as doped GaAs, which also scintillates at room temperature ( 49 ), enhancements on the order of ~50 and ~150 could be respectively achieved in the two regimes (over a 2π collection solid angle).…”
Section: Observation Of Strongly Enhanced Scintillation Induced By X-...mentioning
confidence: 99%
“…For example, for a thin high-index material such as doped GaAs, which also scintillates at room temperature (49), enhancements on the order of ~50 and ~150 could be respectively achieved in the two regimes (over a 2p collection solid angle).…”
Section: Observation Of Strongly Enhanced Scintillation Induced By X-...mentioning
confidence: 99%
“…Many developing applications for SNSPDs such as sub-GeV DM searches using n-type GaAs as cryogenic scintillating targets [27][28][29]45 and nanowires directly as target masses 46 require large sensor active areas (cm 2 -scale) to realize a robust experiment [47][48][49] . As a nanofabrication technique, the serial nature of EBL becomes unfeasible to write dense micronscale patterns over large active areas, and the 1 mm 2 devices are at the limit of EBL's scope.…”
Section: Discussionmentioning
confidence: 99%
“…The mm 2 arrays fabricated in this work are a promising photosensor for a novel DM search experiment using cryogenic scintillating targets. Scintillating n-type GaAs doped with silicon and boron has recently been proposed as a target for detecting sub-GeV DM via electron recoils [27][28][29] . The emission bands of n-type GaAs are centered at 860 nm, 930 nm, 1070 nm, 1335 nm, with the 930 nm band having the highest luminosity.…”
Section: Introductionmentioning
confidence: 99%
“…One could expect even greater scintillation enhancements on the order of ∼ 4n 2 in the ray-optics approximation [39] or ∼ 4πn 2 for periodic structures on the wavelength scale [41,42] (where n is the index of refraction). For example, for a high-index material such as doped GaAs, which also scintillates at room temperature [44], enhancements on the order of ∼ 50 and ∼ 150 could be respectively achieved in the two regimes (over a 2π collection solid angle).…”
Section: Observation Of Strongly Enhanced Scintillation Induced By X-...mentioning
confidence: 99%