2017
DOI: 10.1016/j.solener.2017.04.018
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How the relative permittivity of solar cell materials influences solar cell performance

Abstract: The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate whether such an approach is valid. Specifically, we show the effect of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration a… Show more

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Cited by 41 publications
(30 citation statements)
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“…Permittivity should also be considered as large permittivity should be related to the power law changes in conductivity and dielectric loss according to the Kramers −Kronig relationships [49][50][51] . The relative permittivity-ramp rate curves were measured from dark-CELIV with hole only device of FTO/NiO x /PEDOT:PSS/Ag [2] .…”
Section: Resultsmentioning
confidence: 99%
“…Permittivity should also be considered as large permittivity should be related to the power law changes in conductivity and dielectric loss according to the Kramers −Kronig relationships [49][50][51] . The relative permittivity-ramp rate curves were measured from dark-CELIV with hole only device of FTO/NiO x /PEDOT:PSS/Ag [2] .…”
Section: Resultsmentioning
confidence: 99%
“…where ε 0 is the vacuum permittivity, ε is the dielectric constant, A is the area, and d is the width. The vacuum permittivity has a value of 8.8 × 10 −12 F/m, the CIGS dielectric constant is 13.6 [45], the Al 2 O 3 dielectric constant is 9 [46], the device area is 0.5 cm 2 , and d is the depletion region width of the p-n junction for each device or the Al 2 O 3 thickness for the passivation layer. Both net acceptors concentration (N cv ) and depletion region (ω) were estimated through capacitance-voltage-frequency (C-V-f) measurements.…”
Section: B Ac Measurementsmentioning
confidence: 99%
“…The low PCE is due to the easy diffusion of O impurity into the CdS even at a lower temperature, resulting in the bandgap change of CdS. [146] In 2020, Xiao et al used the solution method to fabricate CSTS solar cells with the best PCE of 0.164%. [147] 6.…”
Section: Other Solar Cells Similar To Cu 2 Basn(s X Se 1-x ) 4 Solar mentioning
confidence: 99%