2011
DOI: 10.1149/2.069111jes
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How to Make Optimized Arrays of Si Wires Suitable as Superior Anode for Li-Ion Batteries

Abstract: The fabrication process to produce Si wires with superior structural properties for application in Li-ion batteries is described. The process is based on the electrochemical etching of pores in Si, followed by a chemical over-etching step. The wires obtained have a quadratic cross section of around 1.5 × 1.5 μm and are organized in an array stabilized by two in-situ-created supports. An electrodeposited Cu film on the array is used as current collector. The method described is a production-near process with a … Show more

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Cited by 41 publications
(35 citation statements)
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“…Given the dimensions and FF of the wires, it can be inferred that the anodes contain 1.35 mg/cm 2 of active material. The details about the fabrication of the anodes are given in [11,12]. …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Given the dimensions and FF of the wires, it can be inferred that the anodes contain 1.35 mg/cm 2 of active material. The details about the fabrication of the anodes are given in [11,12]. …”
Section: Resultsmentioning
confidence: 99%
“…For Si, a rate of C/10 translates into a current of 420 mA/g, since the nominal capacity is 4200 mAh/g. For both types of experiments a voltage limit of 0.11 V (vs. Li) was chosen for the lithiation of the anode, and of 0.7 V for the delithiation; they have been found from cyclic voltammetry experiments (for details see [12]). The definition of a current density related to the C rate is not trivial since it depends on the amount of active material.…”
Section: Variation Of Charging Conditionsmentioning
confidence: 99%
“…Электрохимическое трав- ление проводили в течение 45−90 мин при плотности тока 8 мА/см 2 . Для отделения мембраны от подложки ис-пользовался известный прием по увеличению плотности тока в финальной фазе анодирования [18][19][20], в нашем случае 10 мин при j = 21−25 мА/см 2 . При этом, как правило, достигается критическая плотность тока j PS , соответствующая переходу от режима порообразования к электрополировке.…”
Section: макропористые мембраныunclassified
“…This chemical etching is performed with an etchant with a low concentration of KOH. 1,4 The longer the etching is performed, the thinner the wires. The limit of the wire thickness is around 900 nm, when the stabilizing supports are etched away and the wires start collapsing.…”
Section: Processing Of Si Microwiresmentioning
confidence: 99%
“…Different techniques like standard vapor-liquid-solid (VLS) 4,5 and metal assisted electroless chemical etching methods (MACE) 6 can be used to structure Si. Nevertheless, in the most of the works with these techniques, wires randomly distributed are presented.…”
mentioning
confidence: 99%