HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications

Abstract

In article AlN/SiC structure is in examineted. The mentioned structure is grown by using metal organic chemical vapor deposition (MOCVD)technique. In the structure, SiC substrate is used with 100, 130, 140 and 150 nm thick AlN buffer layers. X-ray diffraction (XRD) results showed that all four samples are in Wurtsite structure. Strain cases, dislocation densities and other micro-structural properties of samples are examined. XRD peak broadening data are used to gain crystallite size and strain values by using Williamson-Hall (WH) method. High resolution x-ray diffraction (HR-XRD) peak analysis is used with Scherrer, WH, modified WH, uniform deformation model (U-DM), uniform stress deformation model (US-DM), uniform deformation energy density model (UDE-DM). Crystallite size, strain, stress, energy density values are gained by using Young module.