Huge magnetoresistance in topological insulator spin-valves at room temperature

Tseng, Po-Chih; Chen, Jyun-Wei; Hsueh, Wen–Jeng

doi:10.1038/s41598-021-91242-y

Cited by 9 publications

(5 citation statements)

References 33 publications

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“…The discovery of the giant magnetoresistance effect was a great achievement in physics [4], and the principle of the giant magnetoresistance isolator is based on the giant magnetoresistance effect. Its theoretical part is widely explained by the "two-current" model proposed by Mott [19]. The "two-current model" of the giant magnetoresistive effect is given in Figure 1.…”

Section: Giant Magnetoresistive Isolator Principlementioning

confidence: 96%

Research progress of giant magnetoresistive isolator

LI,

WU,

et al. 2024

Fourth International Conference on Sensors and Information Technology (ICSI 2024)

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During the entire electronic system data transmission process, sensors can be used to capture information, and more importantly, isolators can be used to ensure the integrity of data transmission. For a long time, optocoupler isolators have been used to achieve electrical isolation. With the progress of sensing technology and the rapid development of the semiconductor industry, using giant magnetoresistance isolation technology to achieve electrical isolation is more conducive to chip integration. This article first introduces the giant magnetoresistance effect, the explanation of its theoretical model, and the areas that still need to be studied. Then, the principle and working process of the giant magnetoresistance isolator are discussed with its structure as the core. Finally, the development direction of giant magnetoresistance isolation devices is prospected.

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Section: Giant Magnetoresistive Isolator Principlementioning

confidence: 96%

Research progress of giant magnetoresistive isolator

LI,

WU,

et al. 2024

Fourth International Conference on Sensors and Information Technology (ICSI 2024)

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“…Significant efforts have been devoted to explore new spinbased functional devices with high performance and efficiency [14][15][16][17][18]. Among them, a nanoscale spin valve is widely considered as an essential candidate building block in spintronic devices [19][20][21][22][23][24][25][26][27][28][29]. It is of great importance to investigate its transport properties, where the spin-resolved correlations have a vital role to play.…”

Section: Introductionmentioning

confidence: 99%

Spin-resolved counting statistics as a sensitive probe of spin correlation in transport through a quantum dot spin valve

Hu,

Wang

et al. 2024

J. Phys.: Condens. Matter

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We investigate the noise in spin transport through a single quantum dot (QD) tunnel coupled to ferromagnetic electrodes with noncollinear magnetizations. Based on a spin-resolved quantum master equation, auto- and cross-correlations of spin-resolved currents are analyzed to reveal the underlying spin transport dynamics and characteristics for various polarizations. We find the currents of majority and minority spins could be strongly autocorrelated despite uncorrelated charge trans fer. The interplay between tunnel coupling and the Coulomb interaction gives rise to an exchange magnetic field, leading to the precession of the accumulated spin in the QD. It strongly suppresses the bunching of spin tunneling events and results in a unique double-peak structure in the noise ofthe net spin current. The spin autocorrelation is found to be susceptible to magnetization alignments, which may serve as a sensitive tool to measure the magnetization directions between the ferromagnetic electrodes.

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“…MR ratios of 0.73% 19 and 5% 20 were reported experimentally based on 2D materials. Researchers have found that the MR ratio of 2D-based spin-valves may meet the applicable requirement for reading in theoretical prediction 21 – 23 . On the other hand, to write the state, critical spin current density (CSCD) of around 5 MA/cm 2 at room temperature is required to switch between two states of the free layer in the memory 24 – 26 .…”

Section: Introductionmentioning

confidence: 99%

High spin current density in gate-tunable spin-valves based on graphene nanoribbons

Wang

Cheng

Hsueh

2023

Sci Rep

Self Cite

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The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the effort. A sufficiently large spin current density is indispensable for the writing mode of MRAMs to switch states. How to attain spin current density beyond critical values around 5 MA/cm2 in 2D materials at room temperature is the greatest obstacle to overcome. Here, we first theoretically propose a spin valve based on graphene nanoribbons (GNRs) to generate a huge spin current density at room temperature. The spin current density can achieve the critical value with the help of tunable gate voltage. The highest spin current density can reach 15 MA/cm2 by adjusting the band gap energy of GNRs and exchange strength in our proposed gate-tunable spin-valve. Also, ultralow writing power can be obtained, successfully overcoming the difficulties traditional magnetic tunnel junction-based MRAMs have faced. Furthermore, the proposed spin-valve meets the reading mode criteria and the MR ratios are always higher than 100%. These results may open the feasibility avenues for spin logic devices based on 2D materials.

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Huge magnetoresistance in topological insulator spin-valves at room temperature

Cited by 9 publications

References 33 publications

Research progress of giant magnetoresistive isolator

Research progress of giant magnetoresistive isolator

Spin-resolved counting statistics as a sensitive probe of spin correlation in transport through a quantum dot spin valve

High spin current density in gate-tunable spin-valves based on graphene nanoribbons

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