2008
DOI: 10.1063/1.2906360
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Huge positive magnetoresistance in a gated AlGaAs∕GaAs high electron mobility transistor structure at high temperatures

Abstract: Magnetoresistivity measurements on a gated AlGaAs∕GaAs high electron mobility transistor (HEMT) structure were performed at high temperatures T. By changing the applied gate voltage Vg, we can investigate the observed huge positive magnetoresistance (PMR) at different effective disorder and density inhomogeneity within the same HEMT structure. The observed PMR value increases with increasing disorder in the depletion mode (Vg⩽0). Moreover, the PMR value is not limited by the quality of the HEMT structure at T=… Show more

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Cited by 3 publications
(1 citation statement)
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“…Nano-patterned semiconductor substrates have been widely used in many microelectronic and optoelectronic devices [1][2][3]. Techniques [4][5][6] such as electron beam lithography, focused ion beam lithography and nano-imprint lithography have been applied in the nano-fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…Nano-patterned semiconductor substrates have been widely used in many microelectronic and optoelectronic devices [1][2][3]. Techniques [4][5][6] such as electron beam lithography, focused ion beam lithography and nano-imprint lithography have been applied in the nano-fabrication.…”
Section: Introductionmentioning
confidence: 99%