2015
DOI: 10.1016/j.ceramint.2015.07.211
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Humidity sensor based on Ga2O3 nanorods doped with Na+ and K+ from GaN powder

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Cited by 36 publications
(11 citation statements)
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“…Особенно сильно этот эффект проявляется при RH ≥ 60%. При T ≤ 50 • C высокую чувствительность к водяным парам в диапазоне RH = 11−95%, быстродействие на уровне 10 с и менее показали толстые пленки из наностержней β-Ga 2 O 3 [28]. Отмечается, что эффект влияния влажности атмосферы на характеристики сенсоров усиливается при имплантации Na + и K + в β-Ga 2 O 3 .…”
Section: Introductionunclassified
“…Особенно сильно этот эффект проявляется при RH ≥ 60%. При T ≤ 50 • C высокую чувствительность к водяным парам в диапазоне RH = 11−95%, быстродействие на уровне 10 с и менее показали толстые пленки из наностержней β-Ga 2 O 3 [28]. Отмечается, что эффект влияния влажности атмосферы на характеристики сенсоров усиливается при имплантации Na + и K + в β-Ga 2 O 3 .…”
Section: Introductionunclassified
“…This is due to their nontoxicity, biostability, biocompatibility, and ease of process separation [22,23]. Novel metal oxide-based platforms, like those using Ga 2 O 3 [24][25][26][27][28] or ZrO 2 [29][30][31][32][33][34], provide better electron conductivity, a higher isoelectric point, and improved biocompatibility or bioactivity [35]. Wang and co-authors prepared humidity sensors based on Ga 2 O 3 which has satisfying sensing properties [24].…”
Section: Introductionmentioning
confidence: 99%
“…Novel metal oxide-based platforms, like those using Ga 2 O 3 [24][25][26][27][28] or ZrO 2 [29][30][31][32][33][34], provide better electron conductivity, a higher isoelectric point, and improved biocompatibility or bioactivity [35]. Wang and co-authors prepared humidity sensors based on Ga 2 O 3 which has satisfying sensing properties [24]. In addition, the use of thin layers of ZnO causes good electrical transport, high isoelectric point and cost effectiveness.…”
Section: Introductionmentioning
confidence: 99%
“…Due to its favorable electronical and optical properties, Ga 2 O 3 is regarded as a promising material for several applications in electronic [1,2] or optoelectronic devices [3], photodetectors [4,5] and sensors [2,[6][7][8][9]. The large band gap energy (4.8 eV) of Ga 2 O 3 [2] contributes to its superior photocatalytic performance [10,11].…”
Section: Introductionmentioning
confidence: 99%