HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

Iwińska, Małgorzata; Amilusik, Mikolaj; Fijałkowski, Michał; Sochacki, Tomasz; Łucznik, B.; Grzanka, Ewa; Litwin‐Staszewska, E.; Weyher, J.L.; Nowakowska-Siwinska, Anna; Muzioł, G.; Skierbiszewski, C.; Grzegory, I.; Guiot, Eric; Caulmilone, Raphael; Boćkowski, Michał

doi:10.1016/j.jcrysgro.2016.08.060

Cited by 13 publications

(9 citation statements)

References 13 publications

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“…3 were taken under white LED light, assuming the central wavelength was 560 nm, the thickness of the swollen space in the GaN substrate was estimated to be about 2.5 µm at the thickest point on the basis of nine interference fringes, which means 2.52 = 0.56/2 × 9 µm. This experiment revealed that our method is a type of smart cut 32 , 33 , 37 – 39 , using a laser instead of an ion implantation, and using its own gas atoms, N, instead of hydrogen ions; hard and brittle GaN can withstand this process. Therefore, this result suggests the possibility of applying this method to the processing of future wide-bandgap semiconductor materials with gas atoms as components such as gallium oxide and aluminum nitride.…”

Section: Resultsmentioning

confidence: 92%

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Tanaka

Sugiura

Kawaguchi

et al. 2021

Sci Rep

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We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.

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Section: Resultsmentioning

confidence: 92%

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Tanaka

Sugiura

Kawaguchi

et al. 2021

Sci Rep

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“…Smart Cut, or ion cut, is a technique of exploiting both ion implantation and wafer bonding to transfer ultrathin single-crystal layers from a donor substrate to a receiving substrate. This technology has been commercialized for the fabrication of silicon-on-insulator (SOI) wafers for many years [ 87 ], but it has also been explored for fabricating free-standing GaN membranes recently [ 2 , 68 , 69 , 211 , 212 , 213 , 214 , 215 ]. Taking splitting GaN, for example, the key processing steps of ion cut [ 2 ] are schematically shown in Figure 14 a.…”

Section: Layer Transfer Techniquesmentioning

confidence: 99%

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

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Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

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“…The lowest detection limit of carbon in GaN of 10 15 at/cm 3 was obtained by [94], but the measurement conditions were not described. The SIMS measurement of gallium nitride grown by hydride vapor phase epitaxy (HVPE) allow receiving the carbon detection limit at the level of 5 × 10 15 at/cm 3 [108][109][110]. Eventually the highly resistive GaN bulk crystals [83] were obtained.…”

Section: Sims Measurement Of Carbonmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

Cited by 13 publications

References 13 publications

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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