Hybrid Boltzmann transport-Schrodinger equation model for quantum well injection transit (QWITT) diodes

Current quantum kinetic Wigner formalisms are single valley models which solve for the distribution function parallel to the applied electric field. However, we find that the quantum distribution function in the transverse momentum direction is also very important in getting the device characteristics correctly. This is demonstrated using a non-parabolic, multiple valley Lattice Wigner function model. The results even apply to the very simple case of homogeneous semiconductor material under a uniform electric field.

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Lattice Wigner simulations of quantum devices

Miller

Neikirk

1992

International Technical Digest on Electron Devices Meeting

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Hybrid Boltzmann transport-Schrodinger equation model for quantum well injection transit (QWITT) diodes

Cited by 1 publication

References 10 publications

Lattice Wigner simulations of quantum devices

Lattice Wigner simulations of quantum devices

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