Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors

Abstract

The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing. Herein, a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and indium gallium arsenide (InGaAs) nanowires (NWs) hybrid heterojunction thin film as the active layer. Under illumination, the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine. The persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors, including excitatory postsynaptic current, long/short-term memory and Pavlovian learning. Furthermore, a high classification accuracy of 89.72% can be achieved through the single-layer-perceptron hardware-based neural network built from C8-BTBT/InGaAs NWs synaptic transistors. Thus, this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.

Microneural Network System Based on MoS2/h-BN/Graphene van der Waals Heterojunction Transistor

“…Due to the excellent photoelectric storage properties of the MoS 2 /h-BN/graphene vdW heterojunction transistor and its potential for programmable logic devices, a microneural network system is built using the logic circuit to explore its possible applications in future machine vision. Neural networks have achieved significant performance improvements in various visual tasks such as machine vision and object detection. ,− However, a large neural network system often has enormous demands for computing and storage resources, making it difficult to deploy them on resource-constrained embedded devices. To solve this problem, we combine the MoS 2 /h-BN/graphene vdW heterojunction transistor with ANN to simulate machine vision applications.…”

Methyl functionalization on polyimide side chains as gate dielectrics for organic transistors

“…Organic thin-film transistors (OTFTs) are one of the most promising devices in organic electronics due to their flexibility, solution processability, lightweight, and low fabrication cost, which makes them have wide application potential in wearable and stretchable devices, radio frequency identification, nonvolatile memory, various sensors, etc. [1][2][3][4][5] Organic semiconductors 6,7 and polymer gate dielectrics, 8,9 as core components of the OTFT, have become the key to optimizing device performance in the last two decades. In particular, for regular bottom-gate top-contact OTFT devices, it is of great importance to develop gate dielectric materials that are compatible with organic semiconductors, as carrier transport occurs at the dielectric layer and semiconductor interface, which are directly related to the mobility and operation voltage of OTFTs.…”

Double Alkyl Side Chains Functionalized Polyimide as Gate Dielectrics for Application in Organic Transistors

“…Organic thin-film transistors (OTFTs) have attracted wide attention as a constituent of next-generation electronics in the application field of wearable and stretchable devices, nonvolatile memory, sensors, etc. − In recent years, various studies and efforts have been carried out to improve the performance of OTFTs devices by developing high-quality organic semiconductor materials. Compared with organic semiconductor materials, − the gate dielectric layer as an important component of OTFTs is equally important, but the research progress is still lagging behind.…”