Proceedings of 2010 IEEE International Symposium on Circuits and Systems 2010
DOI: 10.1109/iscas.2010.5537020
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Hybrid CMOS/memristor circuits

Abstract: -This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principles. Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.

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Cited by 69 publications
(21 citation statements)
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“…In all these structures, the memory effect depends on charge carriers rearrangement at the nanoscale as due to external perturbations [6]. These memory-effect devices have been fabricated by using different materials, including amorphous silicon [7], crystalline silicon [8], platinum/TiO 2 [9], platinum/organic-films [5], aniline-derivatized conductive-polymers [10], and graphene embedded in insulating polymers [11]. These devices have been proposed for different applications including digital [9] and analog [12] memories, logic [13] and neuromorphic [14][15][16] circuits.…”
Section: Introductionmentioning
confidence: 99%
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“…In all these structures, the memory effect depends on charge carriers rearrangement at the nanoscale as due to external perturbations [6]. These memory-effect devices have been fabricated by using different materials, including amorphous silicon [7], crystalline silicon [8], platinum/TiO 2 [9], platinum/organic-films [5], aniline-derivatized conductive-polymers [10], and graphene embedded in insulating polymers [11]. These devices have been proposed for different applications including digital [9] and analog [12] memories, logic [13] and neuromorphic [14][15][16] circuits.…”
Section: Introductionmentioning
confidence: 99%
“…These memory-effect devices have been fabricated by using different materials, including amorphous silicon [7], crystalline silicon [8], platinum/TiO 2 [9], platinum/organic-films [5], aniline-derivatized conductive-polymers [10], and graphene embedded in insulating polymers [11]. These devices have been proposed for different applications including digital [9] and analog [12] memories, logic [13] and neuromorphic [14][15][16] circuits. Although nanowires have been proposed several times as gas sensors [17], and as ion-sensitive Field Effect Transistor (FET) for cancer markers [18] or DNA [19] detection, memristive effect has never been reported before as actually applied for biosensing.…”
Section: Introductionmentioning
confidence: 99%
“…The quest for yet higher performance, energetic efficiency and market growth for information storage pushes the boundaries of existing complementary metal oxide semiconductor (CMOS) technology to its physical limits [1], [2]. The predicted end of roadmap for CMOS set grounds for other candidate technologies that are expected to emerge.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, different electrical features, such as the memristive effect discovered in nanoscale devices [14], have never been explored and considered as actually applicable for biosensing and pH measurement. Memristors have attracted much attention in the last years, especially thanks to their very powerful properties for constructing digital [15], analog [16], and resistive switching memories [17,18], logic [19] and neuromorphic [20] circuits. A memristive system is a passive device that cannot store energy, but that remembers the total charge transfer due to the metastable changes of its conductance [21].…”
Section: Introductionmentioning
confidence: 99%