Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Abstract

We demonstrate a novel electro-luminescence device in which GaN-based μ-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on μ-LED surface....

One (photon), two(-dimensional crystals), a lot (of potential): a quick snapshot of a rapidly evolving field

“…The potential advantages of the coupling with photonic structures have been thoroughly discussed in section 4, and basically boil down to the possibility of enhancing and optimising the performances of 2D QEs via the Purcell effect-for photonic microcavities-and to the realisation of integrated photonic circuits, for the on-chip implementation of quantum computation protocols. As far as electronic devices are concerned, on the other hand, we would like to briefly note the intriguing possibilities opened by the recent coupling of TMDC-based QEs with GaN micro-LEDs, as detailed in [103]. If paired with one of the several methods developed to control the position of 2D QEs, this result could lead to the fabrication of ordered arrays of individually addressable, electrically pumped single-photon sources.…”

“…the loading of single electrons or holes, one by one, into a QE [100]; to the creation of localised trions, featuring a reduced FSS when compared to the neutral exciton species [101]; or to the simultaneous electrical pumping and energy tuning of SPEs via a lateral p-n junction, interfaced with a WSe 2 ML placed on top of a dielectric nanopillar [102]. Moreover, a hybrid electro-optical approach has been recently demonstrated by the appearance of QEs in a WSe 2 ML deposited on a substrate comprised of GaN-based µ-LEDs, operating at low temperatures [103].…”

Alice (and Bob) in Flatland

“…Electrically controlled SPEs have been realized either through a hybrid electro-optical approach, in which a WSe 2 ML was deposited on a GaN-based μ-LED, or through the creation of quantum light emitting diodes made of WSe 2 or WS 2 MLs or bilayers . Simultaneous electrical pumping and energy tuning of SPEs via a p–n junction, interfaced with a WSe 2 ML atop of a dielectric nanopillar (which also acts as a stressor), was also achieved .…”

Short excitonic lifetimes of MoSe2 monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

“…Short excitonic lifetimes and relaxation times observed in monolayers of semiconducting TMDs [16][17][18][19][20][21] are promising for applications in nonlinear optics [22,23] that may now become viable due to the development of scalable growth process of high optical quality material [15,24]. Possible applications include higher harmonic generation [25,26], THz wave generation [27,28], parametric amplification [29] or nanoscale light sources [29,30]. Such processes require control over the characteristic times of the excitonic relaxation processes.…”