Hybrid Graphene-Perovskite Quantum Dot Photodetectors With Solar-Blind UV and Visible Light Response

Zheng, Jian; Jiang, Jun; Di, Wanchao; Xie, Qingguo; Wu, Xiaoming; Xu, Xiangxinng; Yu, Kehan; Wei, Wei

doi:10.1109/lpt.2021.3137493

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…The switching characteristics of the device are shown in figure 9. The photodetector shows good switching characteristics as the UV light is turned on and off [32].…”

Section: Resultsmentioning

confidence: 99%

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Fang,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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The detection of ultraviolet (UV) radiation holds significant importance in various fields. As the demand for superior detector performance grows alongside advancements in science and technology, there is a need for detectors with larger light-to-dark rejection ratios and lower standby power consumption. This paper presents the outstanding performance of the rare earth metal oxide Nd2O3 in broadband UV detection. With a wide forbidden band width of 4.6 eV, eliminating the requirement for additional filters, Nd2O3 emerges as an ideal material for broadband UV detectors. The device exhibits remarkable characteristics, including a dark current of only 1.66 × 10−11 A at a 5 V bias voltage, a light-to-dark rejection ratio of 1.33 × 103 at 280 nm and 15 μW cm−2, a responsiveness of 0.061 A W−1, and a detection rate of 4.7 × 1012 Jones. Furthermore, the performance of the device can be significantly enhanced through the formation of a heterojunction with TiO2. The heterojunction device exhibits a shortened response time of 78.64%, a reduced recovery time of 88.97%, and an increased light-to-dark rejection ratio of 2.75 × 103 at a 5 V bias voltage. This significant improvement in performance highlights the potential of the Nd2O3/TiO2 heterojunction in broadband UV detection.

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“…The switching characteristics of the device are shown in figure 9. The photodetector shows good switching characteristics as the UV light is turned on and off [32].…”

Section: Resultsmentioning

confidence: 99%

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Fang,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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“…Gr has been recognized as an ideal material for fabricating heterojunctions due to its good optical properties and high mobility, with transmittance greater than 90% in the SBUV range. − In this work, based on the AlYN films with a band gap of 4.7 eV, a SBUV detector with a p -Gr/ i -AlYN/ n -Si structure was prepared, as Gr was taken as the upper conductive layer. Relevant characterizations on this device are listed in Figure .…”

Section: Results and Discussionmentioning

confidence: 99%

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Aluminum nitride (AlN) has been proven as a potential photoelectric material with high breakdown field strength, excellent thermal conductivity, and stable physical properties. However, its ultrawide intrinsic band gap (6.2 eV) prohibits the direct application of AlN as an optical absorption layer for solar-blind ultraviolet (SBUV) detectors. To solve this problem, AlYN thin films with a SBUV absorption cut-off edge of 264 nm were prepared first by energy band engineering using yttrium (Y) as the dopant, based on which a photovoltaic detector with a p-Gr/i-AlYN/n-Si structure was fabricated and exhibited excellent performance of SBUV detection at 0 V bias, including an extremely short rise time (t r) of 20 ms, a decay time (t d) of 60 ms, an ultrahigh detectivity (D*) of 5.09 × 1012 Jones, a responsivity (R) of 13 mA/W, a maximum external quantum efficiency (EQE) of 6.69%, and a rejection ratio (R 255nm/R 310nm) of 245. This work has great value as a reference for the preparation of high-performance AlN-based SBUV detectors.

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“…As the light turns on, the electron–hole pair is then separated by the built‐in electric field and the photogenerated holes transfer to the graphene film; and the FAPbI 3 quantum dots capture the photogenerated electrons with a relatively long lifetime to generate a light gate effect; so, the positive charges in the graphene film (photogenerated electrons and holes) can be cycled many times to effectively improve the electrical conductivity and high photoconductive gain of the device. [ 63 ]…”

Section: Discussionmentioning

confidence: 99%

Multifunctional and High‐Performance FAPBI₃ Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity

Shen

2023

Advanced Optical Materials

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Low‐dimensional devices with different photoconductive effects attract much attention in optoelectronics. In this work, negative photoconductivity (NPC) monolayer graphene photodetectors are fabricated by chemical vapor deposition (CVD), and a positive photoconductivity (PPC) photodetector is realized by decorating perovskite FAPbI3 quantum dots prepared by a simple and cost‐effective non‐polar solvent synthesis method on a graphene surface. The graphene‐based photodetector exhibits an NPC characteristic, which is attributed to the absorption and desorption of water molecules on the graphene surface. The responsivity of the photodetector with an NPC characteristic is −0.86 A W−1 under intense ultraviolet light irradiation, and the detectivity is −2.45 × 109 Jones. The FAPbI3 quantum dots/graphene photodetector with a PPC feature has a responsivity of 8.03 A W−1 and a detectivity of 1.89 × 1010 Jones under the irradiation of ultraviolet light of 365 nm and 55.3 mW cm−2 intensity. Due to the intense light absorption of perovskite combined with the extremely high mobility of graphene, photodetectors have high exciton separation and photocurrents when the devices are irradiated by ultraviolet light. Individual photodetectors are successfully created with NPC and PPC effects; the critical analysis for the different photoconductive mechanisms is provided, which will benefit the development of future multifunctional systems.

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Hybrid Graphene-Perovskite Quantum Dot Photodetectors With Solar-Blind UV and Visible Light Response

Cited by 9 publications

References 27 publications

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Multifunctional and High‐Performance FAPBI₃ Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity

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Hybrid Graphene-Perovskite Quantum Dot Photodetectors With Solar-Blind UV and Visible Light Response

Cited by 9 publications

References 27 publications

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd2O3

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd2O3

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Multifunctional and High‐Performance FAPBI3 Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity

Contact Info

Product

Resources

About

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Multifunctional and High‐Performance FAPBI₃ Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity