Hybrid-integrated chalcogenide photonics

Zhang, Bin; Xia, Di; Zhao, Xiaoxue; Wan, Lei; Li, Zhaohui

doi:10.37188/lam.2023.024

Cited by 5 publications

(5 citation statements)

References 123 publications

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“…[ 49,50 ] What's more, the conversion efficiency could be further improved by the introduction of high Q ‐factor microring resonators which are already accessible in the ChG photonic platform. [ 39,51 ] Besides, recently, Pao‐Kang Chen et al. have achieved an improved second‐order nonlinear efficiency in nanophotonic lithium niobate waveguides by using an adapted poling approach to eliminate the impact of nanoscale inhomogeneity, [ 52 ] which also provides a good paradigm for the MPM strategy in our case.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 94%

“…Moreover, GeSbS has a wide transparent spectral range from 0.5 to 11 µm and negligible two‐photon absorption (TPA). [ 39 ] These properties are desirable to form a low‐loss waveguide structure that guides the involved waves far‐separated in the spectrum. Furthermore, the manufacture of GeSbS waveguides is less challenging because it is compatible with established CMOS technology.…”

Section: Waveguide Designmentioning

confidence: 99%

“…In addition, compared to the materials (e.g., TiO 2 , silicon nitride, and polymer) used in hybrid zero‐ χ (2) material/LN photonic waveguides, the GeSbS material has broad transparency to enable low propagation loss from the visible to the mid‐infrared region, large Kerr nonlinearity, considerable photoelastic coefficients, high damage threshold, and CMOS compatibility in fabrication. [ 39 ] ChG‐based photonic devices are prone to access due to the good adhesion of ChG thin films to various substrates via simple single‐source thermal evaporation and the mature techniques for producing ChG waveguides. [ 40–42 ] Different from the etching strategy of LN, the etching process of ChG involves both physical and chemical interactions, making it possible to obtain smooth and vertical waveguide sidewalls, which is critical for low propagation loss.…”

Section: Introductionmentioning

confidence: 99%

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Efficient Parametric Frequency Conversions in Chalcogenide‐Loaded Etchless Thin‐Film Lithium Niobate Waveguides

Song,

Peng,

Guo

et al. 2024

Laser & Photonics Reviews

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Parametric frequency conversion based on second‐order nonlinearity (χ(2)) is critical in many applications. The implementation of second‐order nonlinearity on integrated photonic platforms, in particular on the lithium niobate‐on‐insulator platform, has attracted considerable interest due to its low power consumption and small footprint. However, high‐efficiency on‐chip parametric frequency conversion remains challenging due to fabrication complexity. Here, efficient parametric frequency conversions via modal phase matching (MPM) in etchless thin‐film lithium niobate (TFLN)‐chalcogenide glass (ChG) hybrid waveguides fabricated by a simplified process free from domain engineering and etching of TFLN are proposed and demonstrated. An overall conversion efficiency of 25.55% W−1 for second‐harmonic generation is experimentally achieved in a 1‐cm‐long waveguide, significantly over the reach of the etchless counterparts and in the same order of magnitude as those of the etched cases based on MPM. Broadband frequency conversion with a 3‐dB bandwidth of 57 nm is achieved based on cascaded second‐harmonic generation and difference‐frequency generation via MPM in a nanophotonic waveguide using a continuous‐wave pump. This device shows great promise for efficient on‐chip parametric frequency conversion, enabling a wide range of photonic applications, and paving the way for further integration with various advanced ChG photonic devices toward on‐chip multifunctional microsystems.

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Section: Device Fabrication and Characterizationmentioning

confidence: 94%

Section: Waveguide Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Efficient Parametric Frequency Conversions in Chalcogenide‐Loaded Etchless Thin‐Film Lithium Niobate Waveguides

Song,

Peng,

Guo

et al. 2024

Laser & Photonics Reviews

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“…In this work, we demonstrate a systematic waveguide loss reduction study on Ge 28 Sb 12 Se 60 (GeSbSe) chalcogenide glass. Chalcogenide glass exhibits an extremely wide transparency window through the near-IR all the way to the long-wave IR [14][15][16][17][18] and is considered a practical waveguide material for mid-IR photonics. To date, there are several reports on lowloss chalcogenide glass waveguides with various compositions [19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Mitigating waveguide loss in Ge–Sb–Se chalcogenide glass photonics

Han,

Niu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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Minimizing propagation loss within waveguides remains a central objective across diverse photonic platforms, impacting both linear lightwave transmission and nonlinear wavelength conversion efficiencies. Here, we present a method to mitigate waveguide loss in Ge28Sb12Se60 chalcogenide glass, a material known for its high nonlinearity, broad mid-infrared transparency, and significant potential for mid-IR photonics applications. By applying a sacrifical oxide layer to eliminate etching residues and a subsequent waveguide thermal reflow to smooth lithography-induced line edge roughness, we successfully reduced the waveguide loss down to 0.8 dB/cm. This represents the best result in small-core and high-index-contrast Ge28Sb12Se60 channel waveguides. Our approach paves the way for low-loss, on-chip mid-infrared chalcogenide photonic devices.

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“…In the future, the advancement of heterogeneous hybrid integration technology will promote the rapid development of photonic chips integrated with multiple functional material platforms. For example, in recent years, a series of new photonic integrated materials have emerged, such as III-V group materials, silicon nitride, lithium niobate, silicon carbide, aluminum nitride and chalcogenide materials [13][14][15]. Therefore, photonic integrated devices based on new platform materials have greatly promoted the rapid development of optical information generation, modulation, exchange and processing.…”

mentioning

confidence: 99%