Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Boller, Klaus-J.; Rees, Albert van; Fan, Youwen; Mak, Jesse; Lammerink, R.; Franken, Cornelis A. A.; Slot, Petrus J.M. van der; Marpaung, David; Fallnich, Carsten; Epping, Jörn P.; Oldenbeuving, Ruud M.; Geskus, Dimitri; Dekker, R.; Visscher, Ilka; Grootjans, Robert; Roeloffzen, C.G.H.; Hoekman, Marcel; Klein, E.J.; Leinse, Arne; Heideman, René

doi:10.3390/photonics7010004

Cited by 98 publications

(59 citation statements)

References 188 publications

(222 reference statements)

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“…It can be seen that the optical power drops at the edges of the gain spectrum. But also increased tuning ranges of up to 120 nm have been reported using our hybrid integrated laser [17]. Note, that this wavelength tuning is discrete and that the mode-hop-free tuning range is far smaller.…”

Section: Laser Characteristicssupporting

confidence: 50%

“…Superimposed optical spectra covering a total of more than 80 nm tuning range (right). Increased tuning ranges of 120 nm have been reported [17].…”

Section: Laser Characteristicsmentioning

confidence: 99%

“…Schematic of a hybrid integrated laser with an InP RSOA (purple) and a TriPleX™ (blue) ring resonators mirror with a tunable output coupler. Thermo-optic tuners are indicated in orange[17].…”

mentioning

confidence: 99%

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Hybrid integrated silicon nitride lasers

Epping

Leinse

Oldenbeuving

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleX™. By combining the active functionality of InP with the ultra-low loss properties of the TriPleX™ platform narrow linewidth lasers in the C-band are realized. The InP platform is used for light generation and the TriPleX™ platform is used to define a long cavity with a wavelength-selective tunable filter. The TriPleX™ platform has the ability to adapt mode profiles over the chip and is extremely suitable for mode matching to the other platforms for hybrid integration. The tunable filter is based on a Vernier of micro-ring resonators to allow for single-mode operation, tunable by thermo-optic or stress-induced tuning. This work will show the operational principle and benefits of the hybrid lasers and the state of the art developments in the realization of these lasers. High optical powers (>100 mW) are combined with narrow linewidth (< 1 kHz) spectral responses with tunability over a large (>100 nm) wavelength range and a low relative intensity (<-160 dB/Hz).

show abstract

Section: Laser Characteristicssupporting

confidence: 50%

“…Superimposed optical spectra covering a total of more than 80 nm tuning range (right). Increased tuning ranges of 120 nm have been reported [17].…”

Section: Laser Characteristicsmentioning

confidence: 99%

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Hybrid integrated silicon nitride lasers

Epping

Leinse

Oldenbeuving

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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“…Many orders of magnitude smaller intrinsic linewidths have been achieved with hybrid and heterogeneously integrated diode lasers, ultimately reaching into the sub-kHz-range [17]. In all these approaches the cavity is extended with additional waveguide circuitry fabricated from a different material platform selected for low loss.…”

Section: Introductionmentioning

confidence: 99%

Hybrid integrated InP-Si₃N₄ diode laser with a 40-Hz intrinsic linewidth

et al. 2020

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We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 µm wavelength range with 3 mW output and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.

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“…Previously, laser self-injection locking (SIL) to high-Q crystalline microresonators has been used to demonstrate narrow-linewidth lasers 17,27 , ultra-low-noise photonic microwave oscillators 28 , and soliton microcomb generation 29 , i.e., soliton SIL. Microresonators provide a high level of integration with the semiconductor devices, integrated InP-Si 3 N 4 hybrid lasers have rapidly become the point of interest for narrow-linewidth on-chip lasers [30][31][32] . Moreover, 100 mW multi-frequency Fabry-Perot lasers have recently been employed to demonstrate an electrically driven microcomb 33 .…”

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confidence: 99%

Dynamics of soliton self-injection locking in optical microresonators

et al. 2021

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Soliton microcombs constitute chip-scale optical frequency combs, and have the potential to impact a myriad of applications from frequency synthesis and telecommunications to astronomy. The demonstration of soliton formation via self-injection locking of the pump laser to the microresonator has significantly relaxed the requirement on the external driving lasers. Yet to date, the nonlinear dynamics of this process has not been fully understood. Here, we develop an original theoretical model of the laser self-injection locking to a nonlinear microresonator, i.e., nonlinear self-injection locking, and construct state-of-the-art hybrid integrated soliton microcombs with electronically detectable repetition rate of 30 GHz and 35 GHz, consisting of a DFB laser butt-coupled to a silicon nitride microresonator chip. We reveal that the microresonator’s Kerr nonlinearity significantly modifies the laser diode behavior and the locking dynamics, forcing laser emission frequency to be red-detuned. A novel technique to study the soliton formation dynamics as well as the repetition rate evolution in real-time uncover non-trivial features of the soliton self-injection locking, including soliton generation at both directions of the diode current sweep. Our findings provide the guidelines to build electrically driven integrated microcomb devices that employ full control of the rich dynamics of laser self-injection locking, key for future deployment of microcombs for system applications.

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Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Cited by 98 publications

References 188 publications

Hybrid integrated silicon nitride lasers

Hybrid integrated silicon nitride lasers

Hybrid integrated InP-Si₃N₄ diode laser with a 40-Hz intrinsic linewidth

Dynamics of soliton self-injection locking in optical microresonators

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Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Cited by 98 publications

References 188 publications

Hybrid integrated silicon nitride lasers

Hybrid integrated silicon nitride lasers

Hybrid integrated InP-Si3N4 diode laser with a 40-Hz intrinsic linewidth

Dynamics of soliton self-injection locking in optical microresonators

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Hybrid integrated InP-Si₃N₄ diode laser with a 40-Hz intrinsic linewidth