Hybrid Integration Between Resonant Tunneling Diodes and Unclad Microphotonic Diplexer for Dual-Channel Coherent Terahertz Receiver

Yu, Xiongbin; Headland, Daniel; Nishida, Yukio; Koala, Ratmalgre; Fujita, Masayuki; Nagatsuma, Tadao

doi:10.1109/jstqe.2021.3130813

Cited by 11 publications

(3 citation statements)

References 45 publications

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“…115) In addition to these antenna integrations, coupling with hollow and photonic crystal waveguides has also been reported. [116][117][118] Various functional devices that use photonic crystal waveguides, such as multiplexers and high-Q resonators, have been studied, and have the potential to expand the functionality of RTD devices.…”

Section: Highly Directional and Efficient Radiation And Polarization ...mentioning

confidence: 99%

Fundamentals and recent advances of terahertz resonant tunneling diodes

Suzuki,

Asada

2024

Appl. Phys. Express

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In the last two decades, rapid advancements in room-temperature oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for high-frequency operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.

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Section: Highly Directional and Efficient Radiation And Polarization ...mentioning

confidence: 99%

Fundamentals and recent advances of terahertz resonant tunneling diodes

Suzuki,

Asada

2024

Appl. Phys. Express

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“…3(a). We employ an evanescent directional coupler formed of a pair of unclad silicon wires separated by a micro-scale air gap [4,6,8]. Low frequencies are transferred across the airgap more quickly, while high frequencies mainly remain the original waveguide.…”

Section: Diplexer With Integrated Filtersmentioning

confidence: 99%

“…In this context, THz communication systems using silicon dielectric waveguides have been reported in recent years [5,6]. With the aim of utilizing the wide bandwidth efficiently, we have previously investigated frequency-division multiplexing (FDM) using a silicon diplexer [4], [6]- [8] and a multiplexer [9]. In the cited work [8], we developed a 600-GHz-band unclad silicon diplexer and achieved a 16-Gbit/s error-free two-channel wireless transmission.…”

Section: Introductionmentioning

confidence: 99%

300-GHz-Band Diplexer for Frequency-Division Multiplexed Wireless Communication

Kawamoto

Yoshioka

Shibata

et al. 2023

IEICE Trans. Electron.

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We propose a novel silicon diplexer integrated with filters for frequency-division multiplexing in the 300-GHz band. The diplexer consists of a directional coupler formed of unclad silicon wires, a photonic bandgap-based low-pass filter, and a high-pass filter based on frequencydependent bending loss. These integrated filters are capable of suppressing crosstalk and providing >15 dB isolation over 40 GHz, which is highly beneficial for terahertz-range wireless communications applications. We have used this diplexer in a simultaneous error-free wireless transmission of 300-GHz and 335-GHz channels at the aggregate data rate of 36 Gbit/s.

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Terahertz integration platforms using substrateless all-silicon microstructures

Headland,

Fujita,

Carpintero

et al. 2023

APL Photonics

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The absence of a suitable standard device platform for terahertz waves is currently a major roadblock that is inhibiting the widespread adoption and exploitation of terahertz technology. As a consequence, terahertz-range devices and systems are generally an ad hoc combination of several different heterogeneous technologies and fields of study, which serves perfectly well for a once-off experimental demonstration or proof-of-concept, but is not readily adapted to real-world use case scenarios. In contrast, establishing a common platform would allow us to consolidate our design efforts, define a well-defined scope of specialization for “terahertz engineering,” and to finally move beyond the disconnected efforts that have characterized the past decades. This tutorial will present arguments that nominate substrateless all-silicon microstructures as the most promising candidate due to the low loss of high-resistivity float-zone intrinsic silicon, the compactness of high-contrast dielectric waveguides, the designability of lattice structures, such as effective medium and photonic crystal, physical rigidity, ease and low cost of manufacture using deep-reactive ion etching, and the versatility of the many diverse functional devices and systems that may be integrated. We will present an overview of the historical development of the various constituents of this technology, compare and contrast different approaches in detail, and briefly describe relevant aspects of electromagnetic theory, which we hope will be of assistance.

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Hybrid Integration Between Resonant Tunneling Diodes and Unclad Microphotonic Diplexer for Dual-Channel Coherent Terahertz Receiver

Cited by 11 publications

References 45 publications

Fundamentals and recent advances of terahertz resonant tunneling diodes

Fundamentals and recent advances of terahertz resonant tunneling diodes

300-GHz-Band Diplexer for Frequency-Division Multiplexed Wireless Communication

Terahertz integration platforms using substrateless all-silicon microstructures

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