Hybrid integration of a CMOS active quench and reset circuit for a geiger-mode avalanche photodiode

Cronin, D.; Morrison, Alan P.; McCarthy, K.G.

doi:10.1117/12.644108

Cited by 3 publications

(1 citation statement)

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“…These circuits are commonly known as active quench and reset circuits and there are many published designs by several research groups. 45,46 The holdoff time required to prevent afterpulsing effects will skew the photon detection statistics if it is not optimised to match the mean trap lifetime responsible for producing the afterpulses. Normally optimisation of the hold-off time requires manual tuning by increasing the hold-off time until afterpulsing is no longer observed by autocorrelation While the development of circuits and application specific integrated circuits is essential to the exploitation of advances in detector development, it must be understood that commercial deployment requires turnkey solutions where everything from the device, packaging, circuitry and software interface is taken care of.…”

Section: Circuits For Operation and Control Of Apds And Geiger-mode Apdsmentioning

confidence: 99%

Progress towards photon counting between 1μm and 1.6μm using silicon with infrared absorbers

Morrison

Hayes²,

Gity

et al. 2010

SPIE Proceedings

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Silicon based avalanche photodiodes (APDs) have exhibited impressive performance over the visible spectrum for more than a decade. Photon counting with these devices has progressed to the level where room-temperature operation and low dark count rates (< 100 Hz) are commonplace. Several commercial enterprises have been established to capitalise on these devices and many niche markets are now serviced by incorporating these devices into suitable systems. This paper describes one approach that allows the performance of silicon based Geigermode avalanche photodiodes (GM-APDs) to be extended into the near-infra-red. The process development is described whereby Ge absorbers are incorporated into adapted silicon APD designs to provide separate absorption and multiplication devices. Simulation results are presented outlining the performance of these devices at wavelengths between 1 μm and 1.6 μm.The performance results from silicon APD designs are presented for visible wavelengths. A silicon-germanium bonding process is described and the challenges presented in developing the hybrid absorber/multiplier structure are detailed. Finally, a summary of appropriate custom application integrated circuits for various applications is discussed.

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Section: Circuits For Operation and Control Of Apds And Geiger-mode Apdsmentioning

confidence: 99%