Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors

Lee, Yong-Woo; Yoon, Jinsu; Jang, Jun Tae; Choi, Byoung Ho; Kim, Hyojin; Park, Geon-Hwi; Kim, Dong Myong; Kim, Dae Hwan; Kang, Min-Ho; Choi, Sung-Jin

doi:10.1063/1.5139085

Cited by 6 publications

(5 citation statements)

References 30 publications

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“…Summary of the device structure parameters and device performances for the reported hybrid-CMOS inverter using n-channeloxide-TFT and p-channel organic-TFT. ∼ 10 6 ) [89]. The achievement is considered mainly by originating from the use of high-performance of pchannel TFT and the well-balanced electrical performances of CNT-TFTs and a-IGZO-TFTs.…”

Section: Oxide/organic-tft-based Hybrid Cmos Invertermentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In-Ga-Zn-O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over > 10 cm 2 /Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.

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Section: Oxide/organic-tft-based Hybrid Cmos Invertermentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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“…The remarkable voltage amplification achieved in our study is benchmarked against various semiconductor systems, including pristine semiconducting polymers 16,25,27–37 (both unipolar and complementary configurations), p-type oxide semiconductors, 38–42 p-type organic semiconductors 43–52 (such as polymers and carbon nanotubes) and n-type IGZO (complementary). At V DD < 10 V, the voltage gains reported in the literature typically fall below 50 V/V, representing a roughly 4-fold difference compared to our hybrid inverters composed of the polymer monolayer and IGZO.…”

Section: Resultsmentioning

confidence: 99%

Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters

Cheng,

Zhang,

Zheng

et al. 2024

J. Mater. Chem. C

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“…The equivalent circuit model allows the use of resistance values measured under actual operating conditions, enabling more accurate verification of the conduction mechanism. , By using the contact resistance and bulk resistance of a single OS-based TFT, electronic circuits can be built, and it is shown in Figure a. This circuit consists of two contact resistances and one bulk resistance.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling

Kim

Cho

et al. 2021

ACS Appl. Mater. Interfaces

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Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) have been developed as active layers of TFTs. Among them, indium–gallium–zinc oxide (IGZO) is actively used in the organic light-emitting diode display field. However, despite their superior off-state properties, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption. Herein, we determine new working mechanisms in dual-stacked OS, and based on this, we develop a dual-stacked OS-based TFT with improved performance: high field-effect mobility (∼80 cm2/V·s), ideal threshold voltage near 0 V, high on–off current ratio (>109), and good stability at bias stress. Induced areas are formed at the interface by the band offset: band offset-induced area (BOIA) and BOIA-induced area (BIA). They connect the gate bias-induced area (GBIA) and electrode bias-induced area (EBIA), resulting in high current flow. Equivalent circuit modeling and the transmission line method are also introduced for more precise verification. By verifying current change with gate voltage in the single OS layer, the current flowing direction in the dual-stacked OS is calculated and estimated. This is powerful evidence to understand the conduction mechanism in a dual-stacked OS-based TFT, and it will provide new design rules for high-performance OS-based TFTs.

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Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors

Cited by 6 publications

References 30 publications

Recent progress of oxide-TFT-based inverter technology

Recent progress of oxide-TFT-based inverter technology

Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters

Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling

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