2021
DOI: 10.1002/pssa.202000650
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Hybrid Lead Halide Perovskite Films with Large Grain Size Via Spin‐Coating Free Fabrication

Abstract: Herein, a spin‐coating‐free method to deposit CH3NH3PbI3 perovskite films with large grains is demonstrated. The effect of processing temperature on the property of hybrid lead halide perovskite films is investigated. It is found that the grain domain size is enlarged by increasing processing temperature. Dense and uniform CH3NH3PbI3 films with grain domain size close to 1 mm are obtained using this method. A higher processing temperature also promotes the conversion from precursors solution to perovskite, but… Show more

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Cited by 2 publications
(2 citation statements)
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“…The hole mobilities were calculated by fitting the resulting curves to a space-charge-limited form where SCLC can be described by: where ε 0 is the permittivity of free space (8.85 × 10 −12 F m −1 ), ε r is the relative dielectric constant of the conjugated polymers (typically assumed as 3), μ h is the hole mobility, L is the film thickness of active layer, and β is the field-dependent factor, V bi is the built-in potential due to the WF difference of electrodes caused by contact resistance and series resistance across the electrodes. 41 …”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The hole mobilities were calculated by fitting the resulting curves to a space-charge-limited form where SCLC can be described by: where ε 0 is the permittivity of free space (8.85 × 10 −12 F m −1 ), ε r is the relative dielectric constant of the conjugated polymers (typically assumed as 3), μ h is the hole mobility, L is the film thickness of active layer, and β is the field-dependent factor, V bi is the built-in potential due to the WF difference of electrodes caused by contact resistance and series resistance across the electrodes. 41 …”
Section: Methodsmentioning
confidence: 99%
“…where 3 0 is the permittivity of free space (8.85 Â 10 À12 F m À1 ), 3 r is the relative dielectric constant of the conjugated polymers (typically assumed as 3), m h is the hole mobility, L is the lm thickness of active layer, and b is the eld-dependent factor, V bi is the builtin potential due to the WF difference of electrodes caused by contact resistance and series resistance across the electrodes. 41 AFM images were obtained using Veeco Dimension 3100 instrument working at tapping mode.…”
Section: Measurements and Characterizationmentioning
confidence: 99%