Abstract:In this work, hybrid low-dropout voltage regulators (LDO) designed with a TFET-MOSFET nanowire (NW) technologies are presented. The devices were modeled using Verilog-A with lookup tables based on experimental data of NW-TFETs and NW-MOSFETs fabricated in the same silicon vertical process flow. In all LDOs, the amplifier devices were biased with the same gm/ID = 9.5 V-1 for a maximum load current/capacitance of 1 mA/1 nF. In the hybrid regulators, the power transistors are designed with NW-MOSFETs to deliver t… Show more
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