Hybrid lumped/distributed band-pass filter in IPD technology for ultra-wideband applications

Manchec, Alexandre; Laporte, Claire; Quendo, Cédric; Ezzeddine, Hilal; Clavet, Yann; Rius, Éric; Favennec, Jean-François; Potelon, Benjamin

doi:10.1109/mwsym.2011.5972783

Cited by 6 publications

(4 citation statements)

References 4 publications

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“…However, the rejection at 2 GHz and 12 GHz is only −15 dB. The glass-based IPD chip filters in work [25] and [26] are designed only for 3.1-4.8 GHz narrowband UWB systems, and the chip size is too large. In work [27], a very compact 3.1-10.6 GHz GaAs-based IPD chip filter is successfully designed with low passband loss and good return loss.…”

Section: Discussionmentioning

confidence: 99%

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A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure

Gao

et al. 2020

Electronics

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Ultra-Wideband (UWB) systems are widely used in low-power, high-speed, high-security short-range wireless communication systems throughout digital homes and offices. In the RF front-end of a UWB system, bandpass filters (BPFs) are used to put through the passband signals and reject the stopband signals. Most UWB BPFs are designed with dielectric materials on circuit boards or LTCC technology. In this paper, a very compact fully integrated UWB chip filter is proposed and designed on a GaAs substrate with nitride as dielectric layers to meet the small size requirement of portable devices for next-generation UWB applications. The filter is constructed with a modified Chebyshev structure. The final filter circuit contains only four inductors instead of six for the conventional Chebyshev filter, which makes the chip more compact and cost effective. The filter is designed and fabricated on a 0.25 μm GaAs pHEMT technology with a chip size of only 0.73 mm × 0.51 mm including the chip edge and scribe line area, while the filter core area is only 0.61 mm × 0.39 mm, including bonding PADs. The measurement results illustrated that the proposed BPF shows a passband covering the frequency range of 3.1–9.0 GHz, the minimum passband insertion loss is only 1.5 dB, the stopband rejection is better than −30 dB throughout frequencies below 2 GHz and above 12 GHz, S11 is less than −16 dB, and S22 is better than −11 dB during the whole passband range. It demonstrated that the proposed filter can be considered as one of the most compact UWB filters.

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Section: Discussionmentioning

confidence: 99%

“…The stopband rejection is good, but the passband frequency range is only 3.1-4.8 GHz. A glass-based on-chip filter using hybrid lumped/distributed elements is proposed in work [26], the passband frequency range is also around 3.1-4.8 GHz. The chip size of these two filters is relatively large: 5.0 mm 2 and 11.5 mm 2 , respectively.…”

Section: Introductionmentioning

confidence: 99%

A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure

Gao

et al. 2020

Electronics

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“…Therefore, the design requirements for a communication system have a high integration of passive devices. Many types of passive devices such as couplers, baluns, inductors, filters, and combiners/dividers are integrated .…”

Section: Introductionmentioning

confidence: 99%

Slot meander spurline bandstop filter using integrated passive device technology

Shrestha

Kim

2014

Micro & Optical Tech Letters

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A slot meander spurline bandstop filter (BSF) is designed, fabricated, and characterized on a semi‐insulating‐GaAs substrate with a thickness of 625 µm and a dielectric constant of 12.85 using integrated passive device technology. The BSF is resonated at 5.44 GHz for wireless local area network applications. The purposed bandstop is built with slot meander spurlines and symmetrically folded T‐type slot lines that provide excellent S‐parameter responses. The measured insertion loss (S21) and return loss (S11) are −28.7 and 0.7 dB, respectively, with a 3‐dB fractional bandwidth of 11%. The experimental results nearly have a good agreement with the simulation results. The overall dimension of the proposed BSF is (1966 × 4984) µm2. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:168–172, 2015

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“…Conventional discrete passive components are the most widely used for wireless products, which are typically made using ceramic technology for ceramic's good electrical and thermal characteristics [2] [3]. However, integrated passives devices (IPDs) based on semiconductor processes offer the advantage of excellent parameter control, and allow simplified and compact module design IPD processes can be used to make high density capacitors high Q inductors and large value resistors [4].…”

Section: Introductionmentioning

confidence: 99%

Optimization design and simulation for a band-pass-filter with IPD technology for RF front-end application

Wang

Ren

Liao

et al. 2014

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction M

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A band-pass-filter (BPF) based on silicon substrate was designed and simulated. Different software was applied to design and simulate the character of the filter. A three-order filter was designed dedicating to range 2.4 GHz-2.5 GHz use. The ideal topology circuit was designed with passive inductors and capacitors. Moreover, the integrated passive devices (IPDs) were modeled and simulated with thin film process. To enhance the performance of the IPD, some typical factors were considered to optimize the physical model. The IC design tool and electromagnetic simulation software were used and compared to analysis the character of the filter, which demonstrated that the BPF can be applied to RF front-end system.

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Hybrid lumped/distributed band-pass filter in IPD technology for ultra-wideband applications

Cited by 6 publications

References 4 publications

A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure

A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure

Slot meander spurline bandstop filter using integrated passive device technology

Optimization design and simulation for a band-pass-filter with IPD technology for RF front-end application

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