Hybrid metrology: from the lab into the fab

Vaid, Alok; Elia, Alexander; Iddawela, Givantha; Bozdog, Cornel; Sendelbach, Matthew; Kang, Byungcheol; Isbester, Paul; Wolfling, Shay

doi:10.1117/1.jmm.13.4.041410

Cited by 16 publications

(10 citation statements)

References 9 publications

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“…As the use of three-dimensional (3-D) components in nanotechnology increases, high-throughput and economical 3-D shape analysis and process monitoring of nanoscale objects is increasingly desirable [1–7] and at the same time increasingly challenging [7,8]. It would be further beneficial if this could be done using a widely available, low cost, tool such as a conventional optical microscope.…”

mentioning

confidence: 99%

Noise analysis for through-focus scanning optical microscopy

Attota¹

2016

Opt. Lett.

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A systematic noise-analysis study for optimizing data collection and data processing parameters for through-focus scanning optical microscopy (TSOM) is presented. TSOM is a three-dimensional shape metrology method that can achieve sub-nanometer measurement sensitivity by analyzing sets of images acquired through-focus using a conventional optical microscope. We show that best balance between signal-to-noise performance and acquisition time can be achieved by judicious spatial averaging. Correct background-signal subtraction of the imaging-system inhomogeneities is also critical, as well as careful alignment of the constituent images in the case of differential TSOM analysis.

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mentioning

confidence: 99%

Noise analysis for through-focus scanning optical microscopy

Attota¹

2016

Opt. Lett.

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“…There is no tool that meets all the metrology requirements of ultra-miniaturized CMOS. Test equipment with high efficiency and high precision are needed for the next generation of transistor manufacturing [ 428 , 429 , 430 , 431 , 432 ].…”

Section: Advanced Characterizations For Ultra-miniaturized Cmosmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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“…To improve the parametric uncertainties of model-based measurements, multi-tool methods [5,6] have been proposed and implemented that use Bayesian methods to incorporate these reference measurement values (AFM, TEM, SEM, etc) as well as their measurement uncertainties into the model-based techniques. This multi-tool approach has been named 'hybrid metrology' in the literature of semiconductor manufacturing [7][8][9][10][11][12]. Most publications in this nascent subfield of nanoscale dimensional metrology have focused on incorporating this prior information from reference tools into the modeling, but only a few have considered the combination of raw data from multiple tools [13,14].…”

Section: Introductionmentioning

confidence: 99%

Combining model-based measurement results of critical dimensions from multiple tools

Zhang

Barnes

Zhou

et al. 2017

Meas. Sci. Technol.

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Model-based measurement techniques use experimental data and simulations of the underlying physics to extract quantitative estimates of the measurands of a specimen based upon a parametric model of that specimen. The uncertainties of these estimates are based upon not only the uncertainties in the experimental data, but also the sensitivity of that data to the model parameters, and parametric correlations among those parameters. The combination of two or more model-based techniques as well as the Bayesian approach are shown to be optimal for obtaining the lowest possible uncertainties. As an example, using this form of hybrid metrology, state-of-the-art sub-14 nm wide lines from semiconductor manufacturing are measured using a combined regression from critical-dimension small-angle x-ray scattering and scanning electron microscopy that leads to lower uncertainties.

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Hybrid metrology: from the lab into the fab

Cited by 16 publications

References 9 publications

Noise analysis for through-focus scanning optical microscopy

Noise analysis for through-focus scanning optical microscopy

State of the Art and Future Perspectives in Advanced CMOS Technology

Combining model-based measurement results of critical dimensions from multiple tools

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