Hybrid metrology solution for 1X node technology

Abstract

The accelerated pace of the semiconductor industry in recent years is putting a strain on existing dimensional metrology equipments (such as CDSEM, AFM, Scatterometry) to keep up with ever-increasing metrology challenges. However, a revolution appears to be forming with the recent advent of Hybrid Metrology (HM) -a practice of combining measurements from multiple equipment types in order to enable or improve measurement performance. In this paper we extend our previous work on HM to measure advanced 1X node layers -EUV and Negative Tone Develop (NTD) resist as well as 3D etch structures such as FinFETs. We study the issue of data quality and matching between toolsets involved in hybridization, and propose a unique optimization methodology to overcome these effects. We demonstrate measurement improvement for these advanced structures using HM by verifying the data with reference tools (AFM, XSEM, TEM). We also study enhanced OCD models for litho structures by modeling Line-edge roughness (LER) and validate its impact on profile accuracy. Finally, we investigate hybrid calibration of CDSEM to measure in-die resist line height by Pattern Top Roughness (PTR) methodology.

Hybrid metrology universal engine: co-optimization

“…In our earlier work 3 we identified Data Modification Parameters as any parameter that modulates the hybridization of data or modifies how data are used during hybridization (for example "strength of hybridization", "measurement offset" or "technology matching" parameters). Furthermore, when available data from secondary tool (shown as Toolset 2 in Figure 3-a) is utilized by primary tool (shown as Toolset 1 in Figure 3-a) to enable HM, such implementation is referred as Sequential or standard HM.…”

State of the Art and Future Perspectives in Advanced CMOS Technology

“…There is no tool that meets all the metrology requirements of ultra-miniaturized CMOS. Test equipment with high efficiency and high precision are needed for the next generation of transistor manufacturing [ 428 , 429 , 430 , 431 , 432 ].…”

Optimizing hybrid metrology through a consistent multi-tool parameter set and uncertainty model

“…In this situation, we can explore an alternative approach by using a "confidence or influence" factor based on in-house standards, manufacturing variability, reference metrologies such as transmission electron microscopy (TEM), or other gauges to determine the quality of data and associated measurement uncertainties relative to a reference or gauge. This methodology uses Data Modification Parameters (DMP) to modulate the strength and the way data is used during Hybrid Metrology [8].…”

“…Hybrid metrology has gained significant recognition in a short period of time as an approach to reduce overall measurement uncertainty and optimize measurement throughput while having the potential to yield more complete information [1][2][3][4][5][6][7][8][9]. The method allows for rigorous combinations of two or more different measurement techniques into a single result.…”