Hybrid modelling and emulation of mem‐systems

Kolka, Zdenek; Biolek, Dalibor; Biolková, Viera

doi:10.1002/jnm.825

Cited by 35 publications

(7 citation statements)

References 17 publications

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“…It may be directly used in LTspice version IV to investigate the full potential of the Hewlett Packard nanostructure in electronics. This work complements other important contributions on techniques for robust numerical simulation of memristor models [28]- [29].…”

Section: Discussionsupporting

confidence: 58%

Robust Simulation of a TaO Memristor Model

Ascoli¹,

Tetzlaff²,

Chua³

2015

RADIOENGINEERING

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Abstract. This work presents a continuous and differentiable approximation of a Tantalum oxide memristor model which is suited for robust numerical simulations in software. The original model was recently developed at Hewlett Packard labs on the basis of experiments carried out on a memristor manufactured in house. The Hewlett Packard model of the nano-scale device is accurate and may be taken as reference for a deep investigation of the capabilities of the memristor based on Tantalum oxide. However, the model contains discontinuous and piecewise differentiable functions respectively in state equation and Ohm's based law. Numerical integration of the differential algebraic equation set may be significantly facilitated under substitution of these functions with appropriate continuous and differentiable approximations. A detailed investigation of classes of possible continuous and differentiable kernels for the approximation of the discontinuous and piecewise differentiable functions in the original model led to the choice of near optimal candidates. The resulting continuous and differentiable DAE set captures accurately the dynamics of the original model, delivers well-behaved numerical solutions in software, and may be integrated into a commercially-available circuit simulator.

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Section: Discussionsupporting

confidence: 58%

Robust Simulation of a TaO Memristor Model

Ascoli¹,

Tetzlaff²,

Chua³

2015

RADIOENGINEERING

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“…Memristor emulators [25] are valuable tools for circuit prototyping when physical memristors are not accessible. A number of emulator designs are available in the literature based either on analog [26], [27], [28] or digital [29], [30] techniques. With rare exceptions [31], [32], a common feature of memristor emulators is the need for an external power source.…”

Section: A Emulatormentioning

confidence: 99%

A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors

Pershin

2019

IEEE Trans. Circuits Syst. II

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Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteristics of individual emulators are recorded and self-sustained oscillations in a resistor-volatile memristor circuit are found. The developed emulator offers a great potential for memristive circuit experiments because of its simplicity, similarity of response with volatile memristors, and low cost. Our findings, which are based on emulators, can easily be reproduced with physical volatile memristors and, thus, open up possibilities for emerging in-memory computing architectures.

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“…Modeling of the semiconductor memristor is necessary in the designing of memristor-based circuits and systems. The Simulation Program with Integrated Circuit Emphasis (SPICE) simulators are of great benefit to circuit designers in modeling memristor-based systems [8,[13][14]30].…”

Section: Spice Model Of the Circuitmentioning

confidence: 99%

A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Gül

2019

Balkan Journal of Electrical and Computer Engineering

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Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications. The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures. A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics. The best fit characteristics were acquired using the Zha and Strukov models.

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Hybrid modelling and emulation of mem‐systems

Cited by 35 publications

References 17 publications

Robust Simulation of a TaO Memristor Model

Robust Simulation of a TaO Memristor Model

A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors

A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

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