Bismuth-based solar absorbers have
recently garnered attention
due to their promise as cheap, nontoxic, and efficient photovoltaics.
To date, however, most show poor efficiencies far below those seen
in commercial technologies. In this work, we investigate two such
promising materials, BiSI and BiSeI, using relativistic first-principles
methods with the aim of identifying their suitability for photovoltaic
applications. Both compounds show excellent optoelectronic properties
with ideal band gaps and strong optical absorption, leading to high
predicted device performance. Using defect analysis, we reveal the
electronic and structural effects that can lead to the presence of
deep trap states, which may help explain the prior poor performance
of these materials. Crucially, detailed mapping of the range of experimentally
accessible synthesis conditions allows us to provide strategies to
avoid the formation of killer defects in the future.