“…Sensing mechanism can be explained by the theory that changes in resistance of semiconductor materials caused by the adsorption of oxygen and reaction with target gas molecules [1,2]. In order to deeply explore the mechanism of oxide semiconductor gas sensors, metal oxide like SnO 2 , ZnO, In 2 O 3, Fe 2 O 3 , NiO, CuO, Co 3 O 4 , and WO 3 have been synthesized and applied to gas sensors [3][4][5][6][7][8][9][10][11][12][13][14][15]. Meanwhile, some reports focused on some new areas such as high-energy facets [16,17], reduction in crystalline size [18], oxide composites [19], core-shell heterostructure nanotubes [20,21], element doping [22] and hierarchical structures [23,24].…”