Hybrid photodiodes based on 6,13-bis(triisopropylsilylethynyl) pentacene:poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene]/p-silicon

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio

“…Using the following equations, we can estimate φ b ’s at metal/n-type and metal/p-type semiconductor junctions. where n is the diode ideality factor. The difference between the conduction band minimum ( E C ) and E F is 1.33 eV and the difference between E F and the valence band maximum ( E V ) is 0.57 eV for a neutral pentacene. ,,, Therefore, we can determine φ b at our graphene/pentacene junction under a specific V g : 0.74 and 0.97 eV under V g of −2.0 and −1.0 V, respectively, in p-type region; 1.71 and 1.50 eV under V g of 1.0 and 2.0 V, respectively, in n-type region. In p-type region, barrier height for holes (φ b2 ) increases as V g increases from −2.0 to −1.0 V. In n-type region, barrier height for electrons (φ b1 ) decreases as V g increases from 1.0 to 2.0 V. These results demonstrate that E F of graphene is modulated by applied V g leading to ambipolar characteristics of a graphene/pentacene barristor with a tunable φ b .…”

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

“…The obtained n value of the diodes is higher than unity. The high value of n is attributed to the presence of inhomogenities of the barrier height, the particular distribution of the interface states, series resistance, the image force effect, generation-recombination currents within the space-charge region, wide distribution of low Schottky barrier height patches at metal/semiconductor interface, and tunneling [20][21][22][23][24][25][26][27][28][29][30]. where I PH is the photocurrent, A is a constant, m is an exponent and P is the illumination intensity.…”