2023
DOI: 10.1021/acsanm.2c04864
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Hybrid Reduced Graphene Oxide/GaN Nanocolumns on Flexible Niobium Foils for Efficient Photoelectrochemical Water Splitting

Abstract: We present the photoelectrochemical (PEC) watersplitting properties of pristine and reduced graphene oxide (rGO)coated GaN nanocolumns (NCs) on flexible niobium (Nb) metal foils. The structural, optical, and electronic structure analyses of rGOcoated GaN-NCs on Nb foils revealed the formation of a rGO/GaN-NCs hybrid structure. Further, the valence-band studies of pure GaN-NCs shows valence-band maxima at ∼3.0 eV below the Fermi level, which decreased to ∼2.8 eV for rGO/GaN-NCs. The PEC measurement performed on… Show more

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Cited by 17 publications
(10 citation statements)
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“…The photo-switching behavior of the photoelectrodes was investigated by calculating the rise and decay time, and these are found as follows: fall/rise time: 7.1/7.2 s for Bi 2 Se 3 /Mo and 4.02/3.95 s for Sb 2 Se 3 /Mo, while the improved photocurrent response with fall/rise time: 3.2/3.07 s for the Bi 2 Se 3 /Sb 2 Se 3 heterojunction (Figure S2). As the Bi 2 Se 3 , Sb 2 Se 3 , and Bi 2 Se 3 /Sb 2 Se 3 structures were grown on a polycrystalline metal foil, any leakage current due to microstructure defects at the film–metal substrate interface, pinholes, or non-uniformity of the film might lead to the non-zero dark current in the photo-switching behavior . Further to understand the charge-transfer kinetics between the photoelectrode and electrolyte interface, an EIS measurement was performed (at an AC voltage of 0.01 V under light irradiation).…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…The photo-switching behavior of the photoelectrodes was investigated by calculating the rise and decay time, and these are found as follows: fall/rise time: 7.1/7.2 s for Bi 2 Se 3 /Mo and 4.02/3.95 s for Sb 2 Se 3 /Mo, while the improved photocurrent response with fall/rise time: 3.2/3.07 s for the Bi 2 Se 3 /Sb 2 Se 3 heterojunction (Figure S2). As the Bi 2 Se 3 , Sb 2 Se 3 , and Bi 2 Se 3 /Sb 2 Se 3 structures were grown on a polycrystalline metal foil, any leakage current due to microstructure defects at the film–metal substrate interface, pinholes, or non-uniformity of the film might lead to the non-zero dark current in the photo-switching behavior . Further to understand the charge-transfer kinetics between the photoelectrode and electrolyte interface, an EIS measurement was performed (at an AC voltage of 0.01 V under light irradiation).…”
Section: Resultsmentioning
confidence: 99%
“…As the Bi 2 Se 3 , Sb 2 Se 3 , and Bi 2 Se 3 / Sb 2 Se 3 structures were grown on a polycrystalline metal foil, any leakage current due to microstructure defects at the film−metal substrate interface, pinholes, or non-uniformity of the film might lead to the non-zero dark current in the photo-switching behavior. 44 Further to understand the charge-transfer kinetics between the photoelectrode and electrolyte interface, an EIS measurement was performed (at an AC voltage of 0.01 V under light irradiation). The Nyquist plot with the corresponding equivalent circuit diagram is shown in Figure 8d.…”
Section: Resultsmentioning
confidence: 99%
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“…al. [16] Briefly, 40 mg of sodium azide was added into a dispersion of graphene oxide (GO) in 50 ml of water (1 mg/ml). The resulting mixture was agitated at 10 °C for one hour.…”
Section: Preparation Of Ito/cdznnisse/rgo-n 3 Photoelectrodes With In...mentioning
confidence: 99%
“…The use of flexible substrates may enable large-scale rollto-roll PEC devices [37,38]. Some reports on flexible photoelectrode offer a fundamental understanding of developing next-generation roll-to-roll energy device fabrication [38][39][40]. In this work, we have deposited MoS 2 thin film using the CVD technique on TiO 2 nanotube on flexible thin Ti foil.…”
Section: Introductionmentioning
confidence: 99%