Hybrid silicon plasmonic organic directional coupler-based modulator

Abdelatty, Mohamed Y.; Zaki, Aya; Swillam, Mohamed A.

doi:10.1007/s00339-016-0656-9

Cited by 22 publications

(6 citation statements)

References 39 publications

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“…Due to the epsilon near zero property (as previously determined), the FoM of the proposed modulator is obtained as 1.84294, which is significantly higher than that reported in references [37,63,64]. In another simulation, we used n-type InSb instead of AZO and the FoM was obtained as 0.02456, which is much smaller than the FoM of the proposed modulator.…”

Section: Resultsmentioning

confidence: 56%

“…In addition, the obtained results show that the variation in the dielectric function is highly dependent on changing the gate voltage. Due to the epsilon near-zero effect and the variation of the imaginary part of the dielectric function, the sensitivity of the proposed modulator is significantly higher than that obtained in references [37,63,64]. Therefore, the proposed structure is appropriate to use as an absorption electro-optical modulator.…”

Section: Discussionmentioning

confidence: 89%

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Investigation of an absorption plasmonic electro-optical modulator based on the free carrier dispersion effect in the aluminum doped zinc oxide layer

Es’haghi,

Safaei Bezgabadi

2024

Phys. Scr.

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A plasmonic electro-optical modulator, which is based on the free carrier dispersion effect, has been introduced here. The structure of the proposed modulator is a substrate of fused silica/gold/aluminum doped zinc oxide/hafnium dioxide/gold/air. The free carrier dispersion effect occurs in the aluminum doped zinc oxide (AZO) layer. As the electrical permittivity of the AZO layer is near zero (the epsilon near zero effect) at a wavelength of 1.55µm, the amplitude of an electrical field is high in this layer, therefore, the modulator is highly sensitive to the varying refractive index of this layer. By applying a voltage to two gold layers, the electrical charge density changes in the AZO layer. Therefore, the real and imaginary parts of the refractive index have been changed, which led to a change in the absorption of the modulator. In order to obtain the charge density distribution in the AZO layer, the Poisson equation is solved by using the finite difference method. To investigate modulator absorption, the Nelder-Mead method is implemented in order to solve the dispersion equation numerically. Finally, the magnetic field, the electric field, and the time average of the Poynting vector have been given by using the least squares approximation method.

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Section: Resultsmentioning

confidence: 56%

Section: Discussionmentioning

confidence: 89%

Investigation of an absorption plasmonic electro-optical modulator based on the free carrier dispersion effect in the aluminum doped zinc oxide layer

Es’haghi,

Safaei Bezgabadi

2024

Phys. Scr.

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“…In particular, the average slot width w = (w 1 + w 2 )/2 is chosen as 100 nm (following [4], [5], [9], [10]) in order to obtain a strong EO effect already at low applied voltage while keeping the structure feasible from a fabrication standpoint, and h has been designed to be 220 nm to guarantee that each slot, considered individually, exhibits only the fundamental plasmonic mode along the vertical direction. As already suggested in the simulation study [14] for a different coupled-slot plasmonic modulator structure, the device in Fig. 1 can be properly designed to operate as an EO amplitude modulator.…”

Section: Plasmonic Coupled-slot Modulator Geometry and Operation Principlementioning

confidence: 99%

“…Several plasmonic-based modulating devices exploiting different EO materials have been proposed in the recent past, such as the POH MZ modulator [4], [5], [9] based on POH plasmonic phase shifters [10], the POH plasmonic ring modulator [11], the plasmonic directional coupler (PDC) modulator based on ITO [12], [13] or on EO organic materials [14]- [16].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers

et al. 2022

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We present a detailed simulation study on plasmonic-organic hybrid electro-optic modulators based on coupled symmetric or asymmetric plasmonic slots. An electrooptic polymer is exploited as an active material, and the device is compatible with a silicon photonics platform. The proposed device operates at 1550 nm wavelength, typical of data center or long-haul telecommunication systems. The device performance in terms of area, plasmonic losses, optical bandwidth, intrinsic modulation bandwidth and energy dissipation are comparable to already proposed Mach-Zehnder solutions, but with potentially better extinction ratio, coupling losses due to photonic-plasmonic transitions, and flexibility in exploiting, without any performance penalty, asymmetric slots to shift the ON and OFF states bias. Finally, the bias dependence of the modulation chirp is investigated, comparing through and cross-coupling configurations.

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“…In order to accomplish high-speed, the modulators need to have fast carrier (electron and hole) transport, in addition to short photon lifetimes. Improvement in realizing plasmonic modes at different metal-dielectric interfaces opens another vista for EO modulators as it permits a nanoscale light confinement in addition to a high-speed optical data processing [15][16][17][18][19][20]. However, high propagation losses of metals are considered a drawback to plasmonic-based optical devices.…”

Section: Introductionmentioning

confidence: 99%

Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide

2019

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One crucial component in optical communication systems is the optical modulator. It links between the electric and optical domains as it transforms the electric signal into an optical stream. Electro-optical modulation is a very popular scheme. Recently, indium tin oxide (ITO) has been intensively used in optical modulators due to its epsilon-near-zero characteristics. A silicon electro-optic ring resonator modulator is proposed in terms of the outspread application of ITO. An extinction ratio of about 14 dB as well as an insertion loss of 0.075 dB are achieved at a standard telecommunication wavelength of 1.55 microns. The design has low losses, high efficiency, and compact size.

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Hybrid silicon plasmonic organic directional coupler-based modulator

Cited by 22 publications

References 39 publications

Investigation of an absorption plasmonic electro-optical modulator based on the free carrier dispersion effect in the aluminum doped zinc oxide layer

Investigation of an absorption plasmonic electro-optical modulator based on the free carrier dispersion effect in the aluminum doped zinc oxide layer

Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers

Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide

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