2010
DOI: 10.1039/c002092c
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Hybrid thin films of graphene nanowhiskers and amorphous carbon as transparent conductors

Abstract: A new form of hybrid carbon-based thin film was prepared via a pyridine chemical vapour deposition method. The as-obtained films consist of agglomerated flowerlike graphene nanowhiskers embedded in a uniform matrix of amorphous carbon. Schottky solar cells made from the hybrid films and n-type silicon show conversion efficiencies of approximately 1% under AM 1.5 illumination.

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Cited by 33 publications
(19 citation statements)
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“…To evaluate this, we designed the p-n junction solar cells using the BG fi lm and n-Si. As shown in the dark current density-voltage ( J -V ) curves ( Figure 5 c), similar to the graphene/n-Si (G/Si) cell, [30][31][32] the BG/Si cell also exhibits the typical rectifying behavior of a welldefi ned diode but with a lower turn-on voltage and a higher high-rectifi cation ratio in the voltage range over 0.5 V. The photovoltaic properties of the BG/Si solar cells were characterized under air mass 1.5 (AM 1.5) illumination. Figure 5 a,b show the energy-band diagrams of BG, n-Si, and the bottom electrode (Ti/Pd/Ag), and the equilibrium band diagram of BG/Si p-n junction, respectively.…”
supporting
confidence: 53%
“…To evaluate this, we designed the p-n junction solar cells using the BG fi lm and n-Si. As shown in the dark current density-voltage ( J -V ) curves ( Figure 5 c), similar to the graphene/n-Si (G/Si) cell, [30][31][32] the BG/Si cell also exhibits the typical rectifying behavior of a welldefi ned diode but with a lower turn-on voltage and a higher high-rectifi cation ratio in the voltage range over 0.5 V. The photovoltaic properties of the BG/Si solar cells were characterized under air mass 1.5 (AM 1.5) illumination. Figure 5 a,b show the energy-band diagrams of BG, n-Si, and the bottom electrode (Ti/Pd/Ag), and the equilibrium band diagram of BG/Si p-n junction, respectively.…”
supporting
confidence: 53%
“…Although much effort has devoted to improving the fabrication techniques of C/Si heterojunction PV cells ( Table 1 ) and adjusting the bandgap of a‐C, the application of a‐C/Si heterojunction PV cells have developed slowly due to the high density of defects, the difficulty of controlling the sp 2 /sp 3 ratio of the a‐C, the inhomogeneity of dopants, and the extreme growth process of a‐C …”
Section: Amorphous C/si Heterojunction Solar Cellsmentioning
confidence: 99%
“…1 Owing to its remarkable properties, such as large specific 20 surface area, excellently electrical and thermal conductivity, good light transmission, high mechanical strength, graphene-based materials have been developed for active materials of energy storage and conversion, 2-7 transparent conductors, [8][9][10][11] nanoelectronics, [12][13][14] and chemical sensors, [15][16][17][18][19] etc. There being 25 strong π-π stacking interaction, Van der Waals forces and high surface energy, however, graphene monolayer sheets tend to stack and self-aggregate.…”
Section: Introductionmentioning
confidence: 99%