Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H2

Zervos, Matthew; Othonos, Andreas

doi:10.1016/j.jcrysgro.2010.05.040

Cited by 7 publications

(11 citation statements)

References 50 publications

(68 reference statements)

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“…For example, some authors had reported that lateral growth is a response to the rise in temperature [17,18], while others observed that the lateral growth falls when temperature increases [11]. Our experiments clearly show increase and decrease in lateral size with increase of T S , which additionally depends on the other variables.…”

Section: Variablesupporting

confidence: 62%

“…Nonetheless, different research groups recently presented the successful formation of GaN rods using gold particles onto silicon or sapphire [11,12,27]. These apparent opposed results were obtained from univariated experiments, while our factorial design demonstrated that the formation of different morphologies (including rods) even with the presence of gold was possible.…”

Section: The Effect Of Gold Particlesmentioning

confidence: 78%

“…In the case of onedimensional (1D) structures, GaN has been grown as wires or rods by CVD techniques using metal clusters as nucleation centers [9][10], gold being one suitable metal for this purpose [11,12].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor

Arízaga

Soto

Fischer

et al. 2011

Journal of Crystal Growth

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Section: Variablesupporting

confidence: 62%

Section: The Effect Of Gold Particlesmentioning

confidence: 78%

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Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor

Arízaga

Soto

Fischer

et al. 2011

Journal of Crystal Growth

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“…Metal-oxide (MO) semiconductor NWs like ZnO [1], In 2 O 3 [2], Ga 2 O 3 [3] and SnO 2 [4] have been studied, and ZnO NWs in particular have been used for the fabrication of novel nanoscale devices such as light-emitting diodes [5], lasers [6], solar cells [7] and sensors [8]. On the other hand, III-V compound semiconductors and in particular nitrides such as InN [9] and GaN NWs [10-12] have also been investigated in view of their technological applications, e.g. solar cells, especially as it is possible to tune their energy band gap over a wide range like for instance in InGaN [13].…”

Section: Introductionmentioning

confidence: 99%

The nitridation of ZnO nanowires

2012

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ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV corresponding to band edge emission close to 3.2 eV determined from the abrupt onset in the absorption-transmission through ZnO NWs grown on 0.5 nm Au/quartz. We find that the post growth nitridation of ZnO NWs under a steady flow of NH3 at temperatures ≤600°C promotes the formation of a ZnO/Zn3N2 core-shell structure as suggested by the suppression of the peaks related to ZnO and the emergence of new ones corresponding to the cubic crystal structure of Zn3N2 while maintaining their integrity. Higher temperatures lead to the complete elimination of the ZnO NWs. We discuss the effect of nitridation time, flow of NH3, ramp rate and hydrogen on the conversion and propose a mechanism for the nitridation.

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“…Evidently the growth of high-quality GaN NWs is crucial for the fabrication of NWSCs based on III-N NWs. So far GaN NWs have not only been grown by a variety of methods including metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), but also via the direct nitridation of Ga with NH 3 between 900 and 1100°C on a broad variety of substrates, e.g., SiC, Al 2 O 3 , and Si using various catalysts such as In, Fe, Ni, Au, and NiO, reviewed elsewhere [ 10 ]. The GaN NWs have a hexagonal-wurtzite crystal structure and their diameters vary between 10 and 50 nm.…”

Section: Introductionmentioning

confidence: 99%

Gallium hydride vapor phase epitaxy of GaN nanowires

Zervos

Othonos

2011

Nanoscale Res Lett

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Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 content was varied between 10 and 100%. The growth of high-quality GaN NWs depends critically on the thickness of Au and Ga vapor pressure while no deposition occurs on plain Si(001). Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (α)-like GaN layer which occurs without H2. The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs. Moreover, the reduction in the areal density of the GaN NWs and suppression of the α-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs. Finally, the incorporation of H2 leads to a significant improvement in the near band edge photoluminescence through a suppression of the non-radiative recombination via surface states which become passivated not only via H2, but also via a reduction of O2-related defects.

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Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H2

Cited by 7 publications

References 50 publications

Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor

Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor

The nitridation of ZnO nanowires

Gallium hydride vapor phase epitaxy of GaN nanowires

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