Hydride vapor phase epitaxy for gallium nitride substrate

Hu, Jibin; Wei, Hongyuan; Yang, Shuangqiao; Li, Chengming; Li, Huijie; Liu, Xianglin; Wang, Lianshan; Wang, Zhanguo

doi:10.1088/1674-4926/40/10/101801

Cited by 14 publications

(9 citation statements)

References 64 publications

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“…In a typical HVPE growth of GaN, volatile species of GaCl is formed by the interaction of HCl and liquid Ga at high temperature of about 850 o C and carried by hydrogen gas. On the area of substrate surface GaCl reacts with ammonia to form GaN by the following reactions [78] Ga + HCl .…”

Section: Growth Methodsmentioning

confidence: 99%

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

Dat

2021

Linköping Studies in Science and Technology. Licentiate Thesis

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For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. GaN, a semiconductor with wide bandgap, high critical breakdown field, and high electronic saturation velocity is regarded as an alternative of Si. The material properties of GaN make it very suitable for fast-switching HP electronic devices and contribute to the fast growing of GaN technology.The state-of-the-art GaN devices operating up to 650 V have recently become commercially available. Further goal is to reach higher breakdown voltage which can be done via device engineering and material growth optimization.Al x Ga 1−x N is an ultrawide-bandgap (UWBG) semiconductor which is considered as a natural choice for next generation in the development of GaN-based HP electronic devices. This material attracts particular interest due to the possibility for bandgap tuning from 3.4

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Section: Growth Methodsmentioning

confidence: 99%

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

Dat

2021

Linköping Studies in Science and Technology. Licentiate Thesis

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“…The broad use of GaN has accelerated the study of GaN growth using different methods. 3 Today, GaN is mainly grown using three methods: the hydride vapor phase epitaxy (HVPE) method, the sodium flux method (Na-flux method), 4 and the ammonothermal method. 5 The ammonothermal method can provide GaN substrates with the lowest thread dislocation density (TDD).…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, gallium nitride (GaN) has been widely used in wireless charging, inverter technology, 5G communication, and radar fabrication, especially for high-power and high-frequency electronic devices, , due to its wide band gap. The broad use of GaN has accelerated the study of GaN growth using different methods . Today, GaN is mainly grown using three methods: the hydride vapor phase epitaxy (HVPE) method, the sodium flux method (Na-flux method), and the ammonothermal method .…”

Section: Introductionmentioning

confidence: 99%

Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation

et al. 2022

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The low growth rate of bulk gallium nitride (GaN) when using the ammonothermal method is improved herein by optimizing the nutrient geometry. A numerical model considering the dissolution and crystallization process is developed. Heater powers are employed as thermal boundary conditions to match the real ammonothermal system. The flow field, thermal field, and mass concentration field in the autoclave are calculated with or without a central hole in the nutrient basket. Numerical results show that the mass transfer efficiency and supersaturation on the seed crystal surface can be improved with a hole in the nutrient basket in the center in spite of its diverse effect on the heat transfer, which can be overcome by adjusting the heater powers. As a result, the growth rate of the GaN crystal can be obviously increased.

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“…Thus, it is widely used in many new fields, such as wireless charging, new-energy vehicles, and optical masers [1,2]. Three main methods are used to grow GaN substrates: the hydride vapor phase epitaxy (HVPE) method [3], the sodium flux method [4], and the ammonothermal method [5]. Among them, the HVPE method is the mainstream method for GaN wafer fabrication.…”

Section: Introductionmentioning

confidence: 99%

Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

et al. 2022

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The ammonothermal method is considered the most promising method of fabricating bulk gallium nitride (GaN) crystals. This paper improves the ammonothermal growth model by replacing the heater-long fixed temperature boundary with two resistance heaters and considering the real thermal boundary outside the shell. The relationship between power values and temperatures of dissolution and crystallization is expressed by the backpropagation (BP) neural network, and the optimal power values for specific systems are found using the non-dominated sorting genetic algorithm (NSGAII). Simulation results show that there are several discrepancies between updated and simplified models. It is necessary to build an ammonothermal system model with resistance heaters as a heat source. Then large-sized GaN crystal growth is analyzed based on the well-developed numerical model. According to the simulation results, both the increasing rate and maximum stable values of the metastable GaN concentration gradient are reduced for a larger-sized system, which is caused by the inhomogeneity of heat transfer in the autoclave.

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Hydride vapor phase epitaxy for gallium nitride substrate

Cited by 14 publications

References 64 publications

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation

Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

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